(PDF) BDX85 Datasheet - Silicon NPN Darlington Power Transistor

Número de pieza	BDX85
Descripción	Silicon NPN Darlington Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDX85/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C ·Complement to Type BDX86/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX85 45 UNIT VCBO Collector-Base Voltage BDX85A BDX85B 60 80 V BDX85C 100 BDX85 45 VCEO BDX85A Collector-Emitter Voltage BDX85B 60 80 V BDX85C 100 VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IBB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 100 mA 100 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.75 ℃/W isc Website：www.iscsemi.cn 1 page

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PDF BDX85 Data sheet ( Hoja de datos )