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PDF SDT122 Data sheet ( Hoja de datos )
| Número de pieza | SDT122 | |
| Descripción | THYRISTOR | |
| Fabricantes | Silicon Power | |
| Logotipo |  |
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SDT122
53mm / 4.0kV THYRISTOR
Type SDT122 thyristor is suitable for phase control applications such as HVDC valves, static VAR
compensators and synchronous motor drives.
The silicon junction is manufactured by the proven multi-diffusion process and is supplied in an
industry standard disc-type package, ready to mount to forced or naturally cooled heat dissipators
using commercially available mechanical clamping hardware.
ON-STATE CHARACTERISTIC
Process Maximum
8 ms Sine Pulses
On-State Voltage, Vt (V)
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
100
95f:
Initial Tj
125 C
25 C
1000
On-State Current, It (A)
10000
MECHANICAL OUTLINE
J
CL
CL 2 0° ±5 °
AØ
BØ
D
BØ
A Φ = 2.96 in (75.2 mm)
BΦ=1.90 in (48.3 mm)
D=1.07 in (27.2 mm)
PRINCIPAL RATINGS AND CHARACTERISTICS
Repetitive peak off-
state & reverse volts
Repetitive working
crest voltage
Off-state & reverse
leakage current
Average on-state
current
V
DRM
V
RRM
T =0
J
to 125oC
V T =0
DWM
J
V to 125oC
DRM
I
DWM
I
RWM
T =0
J
to 125oC
I
T(AV)
T=
case
70oC
Peak half-cycle
I 60 Hz
TSM
non-rep surge current
50 Hz
On-state voltage
Critical rate of rise
of on-state current
V
TM
di/dt
rep
I =1kA
T
t =8ms
P
T =125oC
J
T =125oC
J
60 Hz
Critical rate of rise
of off-state voltage
Recovery current
dv/dt T =125oC
J
V = .8V
D DRM
I T =125oC
RM J
2A/us
5A/us
Turn-on delay
Turn-off time
t Vd=.5V
d DRM
T 5A/us,-100V
off
20V/us to 2000V
Thermal resistance
Externally applied
clamping force
R
thJC
F
up to
4000
0.8V
DRM
0.8V
RRM
75
75
950
16.0
14.7
1.60
75
1000
60
110
3
500
.025
5500
24.5
V
ma
A
kA
V
A/us
V/us
A
us
us
c/w
lbs.
kN
REPETITIVE PEAK REVERSE
AND OFF-STATE BLOCKING
VOLTAGE
T = 0 to 125oC
J
MODEL
V
V
DRM
RRM
(volts)
(volts)
SDT122FT 4000
4000
SDT122FS 3900
3900
SDT122FR 3800
3800
SDT122FP 3700
3700
SDT122FM 3600
3600
SDT122FK 3500
3500
95f: 5/27/96
1 page | ||
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| PDF Descargar | [ Datasheet SDT122.PDF ] | |
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