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PDF GT60M303 Data sheet ( Hoja de datos )
| Número de pieza | GT60M303 | |
| Descripción | SILICON N CHANNEL IGBT | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT60M303 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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GT60M303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT60M303
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
z Fourth generation IGBT
z FRD included between emitter and collector
z Enhancement mode type
z High speed IGBT : tf = 0.25μs (TYP.)
FRD : trr = 0.7μs (TYP.)
z Low saturation voltage : VCE (sat) = 2.1V (TYP.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
DC
1ms
Emitter−Collector
Foward Current
DC
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
Screw Torque
VCES
VGES
IC
ICP
IECF
IECFP
PC
Tj
Tstg
―
900
±25
60
120
15
120
170
150
−55~150
0.8
V
V
A
A
W
°C
°C
N·m
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
TOSHIBA
GT60M303
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-11-01
1 page  
GT60M303
5 2006-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT60M303.PDF ] | |
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