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PDF C4553 Data sheet ( Hoja de datos )
| Número de pieza | C4553 | |
| Descripción | NPN Transistor - 2SC4553 | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON POWER TRANSISTOR
2SC4553
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4553 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
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low power dissipation. In addition, a high hFE enables alleviation of
the driver load.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 800 (VCE = 2 V, IC = 3 A)
VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
Total power dissipation
IB(DC)
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings
100
100
7.0
±7.5
±10
2.0
30
2.0
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15599EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
1 page  
[MEMO]
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Data Sheet D15599EJ2V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet C4553.PDF ] | |
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