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PDF GT5G131 Data sheet ( Hoja de datos )

Número de pieza GT5G131
Descripción Strobe Flash Applications
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! GT5G131 Hoja de datos, Descripción, Manual

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G131
GT5G131
Strobe Flash Applications
Unit: mm
3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A)
Supplied in compact and thin package requires only a small
mounting area
5th generation (trench gate structure) IGBT
Enhancement-mode
Peak collector current: IC = 130 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 400 V
Gate-emitter voltage
DC VGES
±6
V
Pulse
VGES
±8
Collector current
DC
1 ms
IC
ICP
5
A
130
Collector power dissipation (Note 1)
PC
1.1 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55~150
°C
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 × 1.5 t]
JEDEC
JEITA
TOSHIBA
2-6J1C
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/µs.
1234
1 2002-05-17

1 page




GT5G131 pdf
Switching Time – RG
10
1
0.1
1
toff
tf
ton
tr
Common emitter
VCE = 300 V
VGE = 3 V
IC = 130 A
Tc = 25°C
10 100
Gate resistance RG ()
1000
GT5G131
VCE, VGE – QG
500 10
400 8
300 6
200 4
VGE
Common emitter
100
VCC = 300 V
2
VCE
RL = 2.3
Tc = 25°C
00
0 20 40 60 80
Gate charge QG (nC)
Switching Time – ICP
10
1
0.1
0
toff
ton
tf
Common emitter
tr VCC = 300 V
VGE = 3 V
RG = 30
Tc = 25°C
50 100 150 200
Collector current IC (A)
Maximum Operating Area
800
600
400
VCM = 350 V
200 Tc <= 70°C
VGE = 4 V
10 <= RG <= 300
0
0 40
80
120 160
Peak collector current ICP (A)
200
Minimum Gate Drive Area
200
160
120 Tc = 25°C
70
80
40
0
0246
Gate-emitter voltage VGE (V)
8
5
2002-05-17

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