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PDF GT30J121 Data sheet ( Hoja de datos )

Número de pieza GT30J121
Descripción TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! GT30J121 Hoja de datos, Descripción, Manual

GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications
Fast Switching Applications
Unit: mm
The 4th generation
Enhancement-mode
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 µs (typ.)
Low switching loss: Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
Low saturation voltage: VCE (sat) = 2.0 V (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
600
±20
30
60
170
150
55 to 150
Unit
V
V
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
Rth (j-c)
Max
0.735
Unit
°C/W
JEDEC
JEITA
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
1 2002-04-19

1 page




GT30J121 pdf
10000
3000
1000
C – VCE
Cies
300
100
Common emitter
VGE = 0
30 f = 1 MHz
Tc = 25°C
10
0.1 0.3
1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
GT30J121
500
Common emitter
RL = 10
Tc = 25°C
400
VCE, VGE – QG
20
16
300 200
300
200
VCE = 100 V
100
12
8
4
00
0 40 80 120 160 200
Gate charge QG (nC)
Safe Operating Area
100
IC max (pulsed)*
30 IC max (continuous)
50 µs*
100 µs*
10
DC operation
3
*: Single pulse
1 Tc = 25°C
Curves must be
0.3 derated linearly
with increase in
temperature.
0.1
13
10
30
1 ms*
10 ms*
100 300
Collector-emitter voltage VCE (V)
1000
Reverse Bias SOA
100
30
10
3
1
0.3 Tj 125°C
VGE = 15 V
0.1 RG = 24
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
rth (t) – tw
102
101
100
101
102
103
104
105
104
103
102
101
Tc = 25°C
100 101
102
Pulse width tw (s)
5
2002-04-19

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