|
|
PDF GT15Q102 Data sheet ( Hoja de datos )
| Número de pieza | GT15Q102 | |
| Descripción | High Power Switching Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de GT15Q102 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT15Q102
High Power Switching Applications
GT15Q102
Unit: mm
· The 3rd Generation
· Enhancement-Mode
· High Speed: tf = 0.32 µs (max)
· Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
1200
±20
15
30
170
150
-55~150
Unit
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 4.6 g
―
―
2-16C1C
1 2002-01-18
1 page  
3000
C – VCE
1000
300
Cies
100
Common emitter
30 VGE = 0
f = 1 MHz
Tc = 25°C
10
1 3 10
Coes
Cres
30 100 300 1000
Collector-emitter voltage VCE (V)
Safe operating area
100
50 IC max (pulsed)*
30
IC max (continuous)
10
DC
5 operation
3
*: Single
1 nonrepetitive pulse
Tc = 25°C
0.5 Curves must be
0.3 derated linearly with
increase in
temperature.
0.1
1 3 10
30
100 ms*
50 ms*
1 ms*
10 ms*
100 300 1000 3000
Collector-emitter voltage VCE (V)
GT15Q102
VCE, VGE – QG
1000
Common emitter
RL = 40 W
800 Tc = 25°C
20
16
600
400
600
400
VCE = 200 V
200
12
8
4
00
0 40 80 120 160 200
Gate charge QG (nC)
Reverse bias SOA
50
30
10
5
3
1
0.5
Tj <= 125°C
0.3 VGE = ±15 V
RG = 56 W
0.1
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
103
Tc = 25°C
102
Rth (t) – tw
101
100
10-1
10-2
10-3
10-140-5 10-4
10-3 10-2 10-1 100
Pulse width tw (s)
101 102
5
2002-01-18
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT15Q102.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GT15Q101 | N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
| GT15Q102 | High Power Switching Applications | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |