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Número de pieza | GT15J331 | |
Descripción | High Power Switching Applications Motor Control Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT15J331 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! GT15J331
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J331
High Power Switching Applications
Motor Control Applications
Unit: mm
· The 4th Generation
· Enhancement-Mode
· High Speed: tf = 0.10 µs (typ.)
· Low Saturation Voltage: VCE (sat) = 1.75 V (typ.)
· FRD included between Emitter and collector.
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
600
±20
15
30
15
30
70
150
-55~150
Equivalent Circuit
Unit
V
V
A
A
W
W
°C
°C
Gate
Collector
Emitter
JEDEC
JEITA
TOSHIBA
Weight: 1.5 g
―
―
2-10S1C
JEDEC
JEITA
TOSHIBA
Weight: 1.4 g
―
―
2-10S2C
1 2002-01-18
1 page 3000
1000
C – VCE
Cies
300
100
30 Coes
Common emitter
Cres
10 VGE = 0
f = 1 MHz
3 Tc = 25°C
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
GT15J331
VCE, VGE – QG
500
Common emitter
RL = 20 W
400 Tc = 25°C
20
16
300
300
200
VCE = 100 V
200
100
12
8
4
00
0 10 20 30 40 50 60 70
Gate charge QG (nC)
30
Common collector
VGE = 0
25
IF - VF
20
15
Tc = 125°C
10 25
-40
5
0
0 0.4 0.8 1.2 1.6
Forward voltage VF (V)
2.0
trr, Irr - IF
100
Common collector
di/dt = -100 A/mS
VGE = 0
: Tc = 25°C
: Tc = 125°C
10 trr
Irr
1000
100
1 10
0 3 6 9 12 15
Forward current IF (A)
Safe operating area
50
30 IC max (pulse)*
10 ms*
50 ms*
10 IC max
(continuous)
5
3 DC
operation
1
0.5
*: Single
nonrepetitive pulse
0.3 Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1 3 10
30
100 ms*
1 ms*
100 300
1000
Collector-emitter voltage VCE (V)
Reverse bias SOA
50
30
10
5
3
1
0.5 Tj <= 125°C
0.3 VGE = 15 V
RG = 43 W
0.1
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
5 2002-01-18
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet GT15J331.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT15J331 | High Power Switching Applications Motor Control Applications | Toshiba Semiconductor |
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