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PDF GT10J321 Data sheet ( Hoja de datos )

Número de pieza GT10J321
Descripción TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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TOSHIBA
GT10J321
Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT10J321
High Power Switching Applications
Fast Switching Applications
●  The 4th generation
●  Enhancement-mode
●  Fast Switching(FS) :Operating frequency up to 150kHz(Reference)
●  High speed
:tf=0.03μs(typ.)
●  Low switching loss :Eon=0.26mJ(typ.)
:Eoff=0.18mJ(typ.)
●  Low saturation voltage :VCE(sat)=2.0V(typ.)
●  FRD included between emitter and collector
Maximum Ratings (Ta=25)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector
forward current
DC
1ms
DC
1ms
Collector power dissipation
(Tc=25)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Ratings
600
±20
10
20
10
20
29
150
-55150
Unit
V
V
A
A
W
2001-6- 1/6

1 page




GT10J321 pdf
TOSHIBA
10000
1000
C-VCE
Cies
100 Coes
Common emitter
VG E =0
f=1MHz
Tc=25
Cres
10
0.1 1 10 100
Collector-emitter voltage VCE (V)
IF-VF
20
Common collector
VG E=0
16
1000
12
8
4
0
0
100
125
-40
Tc=25
0.4 0.8 1.2 1.6
Forward voltage VF (V)
SaSfaefeoopperraaitting area
2
Ic max (pulsed)*
Ic max (continuous)
10
5 0 μ s*
DC
operation
1 m s*
1 0 0 μ s*
1
*Single nonrepetitive
pulse Tc=25
Curves must be dilated
linearly with increase in
temperature.
1 0 m s*
0.1
1 10 100
Collector-emitter voltage VCE (V)
1000
GT10J321
Reference
500
Common emitter
RL=30Ω
Tc=25
400
VCE, VGE - QG
20
16
300 VCE=300V
200
200
100 100
0
0 20 40 60
Gate chrage QG (nC)
100
Common collector
di/dt=-100A/μs
VG E =0
    :Tc=25
    :Tc=125
trr
10
trr, Irr - IF
Irr
12
8
4
0
80
1000
100
1
0
100
2468
Forward current IF (A)
Reverse bias SOA
10
10
10
1
0.1
1
Tj125
VG E=15V
RG=68Ω
10 100
Collector-emitter voltage VCE
(V)
1000
2001-6- 5/6

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