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PDF GT10J303 Data sheet ( Hoja de datos )

Número de pieza GT10J303
Descripción N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! GT10J303 Hoja de datos, Descripción, Manual

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GT10J303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT10J303
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Unit: mm
z Third-generation IGBT
z Enhancement mode type
z High speed
: tf = 0.30μs (Max.) (IC = 10A)
z Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A)
z FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorEmitter Voltage
Gate-Emitter Voltage
Collector Current
EmitterCollector Forward
Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
DC
1ms
DC
1ms
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
600
±20
10
20
10
20
30
150
55~150
V
V
A
A
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10R1C
Weight:
g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
10J303
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-10-31
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5 2006-10-31
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