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PDF FDP5N50 Data sheet ( Hoja de datos )

Número de pieza FDP5N50
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDP5N50 Hoja de datos, Descripción, Manual

FDP5N50 / FDPF5N50
N-Channel MOSFET
500V, 5A, 1.4Ω
Features
• RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
D
G
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50 FDPF5N50
500
±30
5 5*
3 3*
20 20*
225
5
8.5
4.5
85 28
0.67 0.22
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50
1.4
0.5
62.5
FDPF5N50
4.5
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP5N50 / FDPF5N50 Rev. A
1
www.fairchildsemi.com

1 page




FDP5N50 pdf
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDP5N50
3
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
PDM
*Notes:
t1
t1t2
t2
1. ZθJC(t) = 1.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
Figure 13. Transient Thermal Response Curve - FDPF5N50
10
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 4.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
FDP5N50 / FDPF5N50 Rev. A
5 www.fairchildsemi.com

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