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PDF C4576 Data sheet ( Hoja de datos )
| Número de pieza | C4576 | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C4576 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Power Transistors
2SC4576
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCER
VCEO
VEBO
ICP
IC
PC
1400
1400
700
5
1.0
0.3
20
1.4
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
W
˚C
˚C
10.5±0.5
9.5±0.2
8.0±0.2
4.5±0.2
1.4±0.1
φ3.7±0.2
5.08±0.5
0.8±0.1
2.54±0.3
2.5±0.2
0.6±0.1
123
1:Base
2:Collector
3:Emitter
TO–220 Package(b)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
VCER
VEBO
hFE
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 1100V, IE = 0
VEB = 4V, IC = 0
IC = 1mA, IB = 0
IC = 1mA, RBE = 100Ω
IE = 1mA, IC = 0
VCE = 5V, IC = 30mA
IC = 60mA, IB = 6mA
IC = 60mA, IB = 6mA
VCE = 10V, IC = 30mA, f = 1MHz
IC = 150mA,
IB1 = 15mA, IB2 = –30mA,
VCC = 250V
min typ max Unit
10 µA
10 µA
700 V
1400
V
5V
10 40
2V
2V
12 MHz
2 µs
3 µs
1 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C4576.PDF ] | |
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