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PDF 13N50CF Data sheet ( Hoja de datos )

Número de pieza 13N50CF
Descripción FQPF13N50CF
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Total 8 Páginas
		
13N50CF Hoja de datos, Descripción, Manual
June 2014
FQPF13N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 13 A, 540 mΩ
Features
• 13 A, 500 V, RDS(on) = 540 m(Max.) @ VGS = 10 V,
ID = 6.5 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode (Typ. 100 ns)
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2006 Fairchild Semiconductor Corporation
FQPF13N50CF Rev. C2
1
S
FQPF13N50CF
500
13
8
52
± 30
530
13
19.5
4.5
48
0.39
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQPF13N50CF
2.58
62.5
Unit
°C/W
www.fairchildsemi.com

1 page

13N50CF pdf
Figure 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
IG = co3nmsAt.
DUT
Qg
Qgd
Charge
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
V1G0GVSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2006 Fairchild Semiconductor Corporation
FQPF13N50CF Rev. C2
5
www.fairchildsemi.com

5 Page



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