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PDF ALM-81224 Data sheet ( Hoja de datos )

Número de pieza ALM-81224
Descripción High Linearity 1450 - 2750 MHz Variable Gain Amplifier
Fabricantes AVAGO 
Logotipo AVAGO Logotipo



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ALM-81224
High Linearity 1450 – 2750 MHz Variable Gain Amplifier
Data Sheet
Description
Avago Technologies’ ALM-81224 is a high linearity vari-
able-gain amplifier module for use in the 1450-2750MHz
band. Gain control is achieved using a single DC voltage
input pin. High linearity is achieved through the use of
Avago Technologies’ proprietary GaAs Enhancement-
mode pHEMT process1. It is housed in a miniature 6.0
x 6.0 x 1.0 mm 24-pin Molded Chip On Board (MCOB)
package. Gain changes monotonically with gain control
pin voltage. Input is fully matched. Output match can be
tuned for optimal performance at a particular frequency
band within the VGA operation frequency range using
common RF board layout. The compact footprint coupled
with high linearity and efficiency makes ALM-81224 an
ideal choice for Basestation transmitters and receivers and
Temperature Compensation Circuitry applications.
Component Image
(6.0 x 6.0 x 1.0) mm 24-lead MCOB
AVAGO
81224
WWYY
XXXX
Note:
Package marking provides
orientation and identification
“81224 “ = Device Code
“WWYY” = Date Code identifies
month and year of
manufacturing
“XXXX” = Last 4 digit of assembly
lot number
Pin Configuration
Vdd1 GND GND GND GND Vdd2
24 23 22 21 20 19
GND 1
18 GND
RFIN 2
Q1/Q2 3
Interstage
4
GROUND
17 ½
¾ RFOUT
16 ¿
15 GND
GND 5
14 GND
GND 6
13 GND
7 8 9 10 11 12
Vc_att GND Vc1 Vc2 GND Vddbias
Features
x High Linearity at low bias current
x High max gain: 23.8 dB typ
x High linearity performance: +16.5 dBm at -65 dBc ACLR
using dual-carrier W-CDMA input signal
x Fully-matched 50 Ohm input and simple output match
x Low Noise Figure
x Built-in attenuator with monotonic response
x Variable Gain range: 38 dB typ
x GaAs E-pHEMT Technology [1]
x Small package size: 6.0 x 6.0 x 1.0 mm
Typical Performances
2140 MHz @ 5 V, 383 mA (typ)
x 23.8 dB Gain at minimum attenuation
x +16.5 dBm output power (-65 dBc ACLR) using dual-
carrier W-CDMA input signal with PAPR = 7.5 dB.
x NF: 2dB @ max gain and 16 dB @ min gain
x P1dB: 27.4 dBm
x Attenuator range: 38 dB with Vc_att: (0 V – 3.3 V)
x Shutdown current (Vc1, Vc2 = 0 V): < 30 PA
Applications
x Basestation Transmitter, Receiver and Temperature
Compensation Circuits requiring continuously variable
gain functionality
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 500 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.

1 page




ALM-81224 pdf
Typical 1485 MHz RF Performance Plots
Application circuit and build of material can be seen in Figure 70 and Table 3 respectively.
0
-5
-10
-15
-20
-25
-30
-35
-40
0.5 1.0 1.5 2.0 2.5
Frequency (GHz)
Figure 8. S11 vs Freq at 1485 MHz
3.0
25° C
-40° C
85° C
3.5 4.0
0
-3
-6
-9
-12
-15
-18
0.5 1.0 1.5 2.0 2.5
Frequency (GHz)
Figure 9. S22 vs Freq at 1485 MHz
3.0
25° C
-40° C
85° C
3.5 4.0
30
25
20
15
10
5
0
-5
-10
0.5 1.0 1.5 2.0 2.5
Frequency (GHz)
Figure 10. S21 vs Freq at 1485 MHz
3.0
25° C
-40° C
85° C
3.5 4.0
30 36
25 32
20 28
15 24
10
5
Gain
Noise Figure
0
20
16
12
-5 8
-10 4
-15 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Vc_Att (V)
Figure 11. Gain & Noise Figure vs Vc_att at 1485 MHz at 25° C
30 36
25 32
20 28
15 24
10
5
Gain
Noise Figure
0
20
16
12
-5 8
-10 4
-15 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Vc_Att (V)
Figure 12. Gain & Noise Figure vs Vc_att at 1485 MHz at -40° C
30 36
25 32
20 28
15 24
10
5
Gain
Noise Figure
0
20
16
12
-5 8
-10 4
-15 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Vc_Att (V)
Figure 13. Gain & Noise Figure vs Vc_att at 1485 MHz at 85° C
5

5 Page





ALM-81224 arduino
Typical 2140 MHz RF Performance Plots
Application circuit and build of material can be seen in Figure 70 and Table 3 respectively.
0
-5
-10
-15
-20
-25
25° C
-30 -40° C
85° C
-35
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Figure 44. S11 vs Freq at 2140 MHz
0
-3
-6
-9
-12
-15
-18
-21
-24
0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Figure 45. S22 vs Freq at 2140 MHz
25° C
-40° C
85° C
3.5 4.0
30
25
20
15
10
5
0
-5
-10
0.5 1.0 1.5 2.0 2.5
Frequency (GHz)
Figure 46. S21 vs Freq at 2140 MHz
3.0
25° C
-40° C
85° C
3.5 4.0
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
0.5
0V
1V
2V
1.0
3V
3.5 V
1.5 2.0 2.5 3.0
Frequency (GHz)
3.5
Figure 47. S11 vs Freq at different Vc_att at 2140 MHz at 25° C
4.0
0
-3
-6
-9
-12
-15
-18 0 V 3 V
-21
1 V 3.5 V
2V
-24
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Figure 48. S22 vs Freq at different Vc_att at 2140 MHz at 25° C
30
20
10
0
-10
-20
-30 0 V 3 V
-40
1 V 3.5 V
2V
-50
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
Figure 49. S21 vs Freq at different Vc_att at 2140 MHz at 25° C
4.0
11

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