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PDF KGH25N120NDA Data sheet ( Hoja de datos )
| Número de pieza | KGH25N120NDA | |
| Descripción | NPT IGBTs | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KGH25N120NDA
General Description
KEC NPT IGBTs offer lowest losses and highest energy efficiency for
application such as IH (induction heating), UPS, General inverter and other
soft switching applications.
FEATURES
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
A
N
O
D
E
d
PP
123
QB
K
M
T
1. GATE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
VCES
VGES
1200
20
V
V
Collector Current
Pulsed Collector Current
@TC=25
@TC=100
Diode Continuous Forward Current @TC=100
Diode Maximum Forward Current
40 A
IC
25 A
ICM* 75 A
IF 25 A
IFM 110 A
Maximum Power Dissipation
Maximum Junction Temperature
@TC=25
@TC=100
300 W
PD
120 W
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
TO-3P(N)-E
C
G
E
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
SYMBOL
R JC
R JC
MAX.
0.4
1.2
UNIT
/W
/W
2009. 2. 19
Revision No : 2
1/6
1 page  
KGH25N120NDA
Fig 13. Gate Charge Characteristics
16
Common Emitter
14 RL = 24Ω
TC = 25 C
12
600V
10
400V
8
6 Vcc = 200V
4
2
0
0 20 40 60 80 100 120 140 160 180 200 220
Gate Charge Qg (nC)
Fig 15. Turn-Off SOA
100
Fig 14. SOA Characteristics
100 IC MAX (Pulsed)
IC MAX (Continuous)
10
50µs
100µs
1 1ms
0.1
0.01
Single nonrepetitive pulse
Tc= 25 C
Curves must be derated
linearly with increase
in temperature
0.1 1
10
DC
100 1000
Collector-Emitter Voltage VCE (V)
10
Safe Operating Area
VGE = 15V, TC =125 C
1
1 10 100 1000
Collector-Emitter Voltage VCE (V)
Fig 16. Transient Thermal Impedance of IGBT
10
1
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
1E-3
1E-5
Single Pluse
1E-4
1E-3
0.01
PDM
t1
t2
1. Duty factor D=t1/t2
2. Peak Tj = Pdm Zthjc + TC
0.1 1 10
Rectangular Pulse Duration (sec)
2009. 2. 19
Revision No : 2
5/6
5 Page | ||
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| PDF Descargar | [ Datasheet KGH25N120NDA.PDF ] | |
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