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PDF AH225 Data sheet ( Hoja de datos )
| Número de pieza | AH225 | |
| Descripción | 1W High Linearity InGaP HBT Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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AH225
1W High Linearity InGaP HBT Amplifier
Applications
Repeaters
Base Station Transceivers
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / CDMA / WiMAX
Product Features
400-2700 MHz
15.5 dB Gain at 2140 MHz
+31 dBm P1dB
+46 dBm Output IP3
300 mA Quiescent Current
+5 V Single Supply
MTTF > 100 Years
Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz,
31.5 dBm CW Pout or 23 dBm WCDMA Pout
Lead-free/RoHS-compliant SOIC-8 Package
General Description
The AH225 is a high dynamic range driver amplifier in a
low-cost surface-mount package. The InGaP/GaAs HBT
is able to achieve high performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.2 dBm of compressed 1dB power.
The integrated active bias circuitry in the devices enables
excellent stable linearity performance over temperature. It
is housed in a lead-free/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.
The AH225 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH225 is ideal for the final stage
of small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a
wide variety of other applications within the 400 to 2700
MHz frequency band.
SOIC-8 Package
Functional Block Diagram
Pin Configuration
Pin #
1
2, 4, 5
3
6, 7
8
Backside Paddle
Symbol
Vbias
N/C
RF_in
RF_Out
Iref
RF/DC GND
Ordering Information
Data Sheet: Rev D 01/26/11
© 2010 TriQuint Semiconductor, Inc.
Part No.
Description
AH225-S8G
1W High Linearity Amplifier
AH225-S8PCB900 920-960 MHz Evaluation Board
AH225-S8PCB1960 1930-1960 MHz Evaluation Board
AH225-S8PCB2140 2110-2170 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
- 1 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 700-850 MHz
S21 vs. Frequency
22
T=+25°C
21
20
19
18
17
600 650 700 750 800 850 900
Frequency (MHz)
Return Loss vs. Frequency
0
T=+25°C
-5
S22
-10
-15
S11
-20
-25
600 650 700 750 800 850 900
Frequency (MHz)
ACLR vs. Pout vs. Freq
3GPP WCDMA,TM1+64DPCH,+5 MHz Offset
-35
T=+25°C
-40
-45
700 MHz
-50 750 MHz
800 MHz
-55 850 MHz
3
T=+25°C
2.5
2
1.5
1
0.5
EVM vs. Pout vs. Freq
OFDM,QAM-64,54 Mb/s
700 MHz
750 MHz
800 MHz
850 MHz
-60 0
19 20 21 22 23 24 25
19 20 21 22 23 24
Pout (dBm)
Pout (dBm)
32
31
30
29
28
27
700
P1dB vs. Frequency
T=+25°C
730 760 790 820
Frequency (MHz)
850
OIP3 vs. Pout / tone vs. Freq
1 MHz tone spacing
55
700 MHz
50 750 MHz
800 MHz
850 MHz
45
T=+25°C
40
35
17
19 21 23
Pout / tone (dBm)
25
Data Sheet: Rev D 01/26/11
© 2010 TriQuint Semiconductor, Inc.
Downloaded from Elcodis.com electronic components distributor
- 5 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
5 Page 
AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 1805-1880 MHz
17
T=+25°C
16
S21 vs. Frequency
15
14
13
12
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
Return Loss vs. Frequency
0
T=+25°C
-5
S22
-10
S11
-15
-20
-25
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset
-30
T=+25°C
-35
-40
1880 MHz
1840 MHz
1805 MHz
-45
-50
-55
-60
19 20 21 22 23 24
Pout (dBm)
3
T=+25°C
2.5
2
1.5
EVM vs. Pout vs. Freq
OFDM, QAM-64, 54 Mb/s
1880 MHz
1840 MHz
1805 MHz
1
0.5
0
25 19 20 21 22 23
Pout (dBm)
24
P1dB vs. Frequency
32
T=+25°C
31
30
29
28
27
1800
1820 1840 1860
Frequency (MHz)
OIP3 vs. Pout / tone vs. Freq
1 MHz Spacing
60
T=+25°C
55
50
1880 MHz
1840 MHz
1805 MHz
45
40
35
30
17
19 21 23
Pout / tone (dBm)
1880
25
Data Sheet: Rev D 01/26/11
© 2010 TriQuint Semiconductor, Inc.
Downloaded from Elcodis.com electronic components distributor
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| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet AH225.PDF ] | |
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