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Número de pieza UBA2213
Descripción Half-bridge power IC
Fabricantes NXP Semiconductors　
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UBA2213
Half-bridge power IC family for CFL lamps
Rev. 2 — 21 November 2011
Product data sheet
1. General description
The UBA2213 family of integrated circuits are a range of high voltage monolithic ICs for
driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. The family is
designed to provide easy integration of lamp loads across a range of burner power and
mains voltages.
2. Features and benefits
2.1 System integration
Integrated half-bridge power transistors
UBA2213A: 220 V; 13.5 ; 0.9 A maximum ignition current
UBA2213B: 220 V; 9 ; 1.35 A maximum ignition current
UBA2213C: 220 V; 6.6 ; 1.85 A maximum ignition current
Integrated bootstrap diode
Integrated high-voltage supply
2.2 General
Adjustable current controlled preheat mode enables the preheat time (tph) to be set
Glow-time control minimizes electrode damage in non-preheat applications
RMS current control
2.3 Fast and smooth light out
Boost with externally controlled timing
Temperature controlled timing during boost state
Smooth transition from boost to burn state
2.4 Burner lifetime
Current controlled preheat with adjustable preheat time
Minimum glow time control to support cold start
Lamp power independent from mains voltage variations
Lamp inductor saturation protection during ignition

1 page




UBA2213 pdf
NXP Semiconductors
UBA2213
Half-bridge power IC family for CFL lamps
7. Functional description
7.1 Supply voltage
The UBA2213 family is powered using a start-up current source and a DVDT supply.
When the voltage on pin HV increases, the VDD capacitor (CVDD) is charged using the
internal JFET current source. The voltage on pin VDD rises until VDD equals VDD(start). The
start-up current source is then disabled. The half-bridge starts switching causing the
charge pump to generate the required VDD supply.
The amount of current flowing towards VDD equals VI(HV) CDVDT f where f represents
the momentary frequency. The charge pump consists of an external half-bridge capacitor
(CDVDT). The SO14 package contains two internal diodes with an internal Zener diode.
Mount these diodes externally with DIP8 packaged devices. The Zener diode ensures the
VDD voltage cannot rise above the maximum VDD rating.
The DVDT supply has its own ground pin (PGND) to prevent large peak currents from
flowing through the external small signal ground pin (SGND).
The start-up current source is enabled when the voltage on pin VDD is below the VDD(stop)
level.
7.2 Start-up state
When the supply voltage on pin VDD increases, the IC enters the start-up state. In the
start-up state, the High-Side Power Transistor (HSPT) is switched off and the Low-Side
Power Transistor (LSPT) is switched on. The circuit is reset and the capacitors on the
bootstrap pin FS (Cbs) and the low-voltage supply pin VDD (CVDD) are charged. Pins RC
and SW are switched to ground.
When pin VDD is above VDD(start), the start-up state is exited and the preheat state is
entered. If the voltage on pin VDD falls below VDD(stop), the system returns to the start-up
state.
Remark: If OTP is active, the IC remains in the start-up state indefinitely. The VDD voltage
slowly oscillates between VDD = VDD(stop) and VDD = VDD(start).
7.3 Reset
A DC reset circuit is incorporated in the high-side driver. The high-side transistor is
switched off when the voltage on pin FS is below the high-side lockout voltage.
7.4 Oscillation control
The oscillation frequency is based on the 555-timer function. A self oscillating circuit is
created comprising the external components: resistors Rosc, RSENSE and capacitor Cosc.
Rosc and Cosc define the nominal oscillating frequency.
An internal divider 0.5 fosc(int) is used to generate the accurate 50 % duty cycle. The
divider sets the bridge frequency at half the oscillator frequency.
The input on pin SW generates the signal VSW and it is used to determine the frequency in
all states except preheat and boost. Signal VSW(ph) is an internally generated signal used
to determine the frequency during the preheat state.
UBA2213
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 November 2011
© NXP B.V. 2011. All rights reserved.
5 of 21

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UBA2213 arduino
NXP Semiconductors
UBA2213
Half-bridge power IC family for CFL lamps
9. Thermal characteristics
Table 4.
Symbol
Rth(j-a)
Rth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to case
[1] In accordance with IEC 60747-1
10. Characteristics
Conditions
in free air
in free air
Typ
[1] 95
[1] 16
Unit
K/W
K/W
Table 5. Characteristics
Tj = 25 C; all voltages are measured with respect to SGND; positive currents flow into the IC.
Symbol
Parameter
Conditions
Min
Low-voltage supply
Start-up state
II(HV)
VDD(start)
VDD(stop)
VDD(hys)
VDD(reg)
Isink
Output stage
input current on pin HV
start supply voltage
VI(HV) = 100 V
oscillation start
stop supply voltage
oscillation stop
hysteresis of supply voltage start stop
regulation supply voltage
sink current
capability of VDD regulator
-
10.7
8
3
-
6
Ron
on-state resistance
high-side transistor:
[1]
UBA2213AX; VI(HV) = 310 V;
ID = 100 mA
-
UBA2213BX; VI(HV) = 310 V;
ID = 100 mA
-
UBA2213CX; VI(HV) = 310 V;
ID = 100 mA
-
low-side transistor:
[1]
Ron(150)/Ron(25) on-state resistance ratio
(150 C to 25 C)
UBA2213AX; ID = 100 mA
UBA2213BX; ID = 100 mA
UBA2213CX; ID = 100 mA
-
-
-
-
VF
tno
VI(FS)
forward voltage
non-overlap time
input voltage on pin FS
HS; IF = 200 mA
LS; IF = 200 mA
bootstrap diode; IF = 1 mA
UnderVoltage LockOut with respect to
pin OUT
-
-
0.7
1.05
3.6
II(FS)
input current on pin FS
VI(HV) = 310 V; VI(FS) = 12 V
10
Typ Max Unit
0.85 -
mA
11.7 12.7 V
8.5 9
V
3.5 4
V
13.8 -
V
- - mA
13.5 -
9.3 -
6.6 -
13.5 -
8.2 -
6.6 -
1.4 -
- 2.0 V
- 2.0 V
1.0 1.3 V
1.35 1.65 s
4.2 4.8 V
14 18 A
UBA2213
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 November 2011
© NXP B.V. 2011. All rights reserved.
11 of 21

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