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PDF UBA2212 Data sheet ( Hoja de datos )
| Número de pieza | UBA2212 | |
| Descripción | Half-bridge power IC | |
| Fabricantes | NXP Semiconductors | |
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UBA2212
Half-bridge power IC family for CFL lamps
Rev. 3 — 27 February 2012
Product data sheet
1. General description
The UBA2212 family of integrated circuits are a range of high voltage monolithic ICs for
driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. The family is
designed to provide easy integration of lamp loads across a range of burner power and
mains voltages.
2. Features and benefits
2.1 System integration
Integrated half-bridge power transistors
UBA2212C: 120 V; 2 ; 3.5 A maximum ignition current
Integrated bootstrap diode
Integrated high-voltage supply
2.2 General
RMS lamp current control
2.3 Fast and smooth light out
Boost with externally controlled timing
Temperature controlled timing during boost state
Smooth transition from boost to steady state
2.4 Burner lifetime
Fixed frequency preheat with adjustable preheat time
Minimum glow time control to support cold start
Lamp power independent from mains voltage variations
Lamp inductor saturation protection during ignition
1 page  
NXP Semiconductors
UBA2212
Half-bridge power IC family for CFL lamps
7. Functional description
7.1 Supply voltage
The UBA2212 family is powered using a start-up current source and a DVDT supply.
When the voltage on pin HV increases, the VDD capacitor (CVDD) is charged using the
internal Junction gate Field-Effect Transistor (JFET) current source. The voltage on pin
VDD rises until VDD equals VDD(start). The start-up current source is then disabled. The
half-bridge starts switching causing the charge pump to generate the required VDD supply.
The amount of current flowing towards VDD equals VHV CDVDT f where f represents the
momentary frequency. The charge pump consists of an external half-bridge capacitor
(CDVDT). The IC contains two internal diodes with an internal Zener diode. The Zener
diode ensures the VDD voltage cannot rise above the maximum VDD rating.
The DVDT supply has its own ground pin (PGND) to prevent large peak currents from
flowing through the external small signal ground pin (SGND).
The start-up current source is enabled when the voltage on pin VDD is below VDD(stop).
7.2 Start-up state
When the supply voltage on pin VDD increases, the IC enters the start-up state. In the
start-up state, the High-Side Power Transistor (HSPT) is switched off and the Low-Side
Power Transistor (LSPT) is switched on. The circuit is reset and the capacitors on the
bootstrap pin FS (Cbs) and the low-voltage supply pin VDD (CVDD) are charged. Pins RC
and SW are switched to ground.
When pin VDD is above VDD(start), the start-up state is exited and the preheat state is
entered. If the voltage on pin VDD falls below VDD(stop), the system returns to the start-up
state.
Remark: If OTP is active, the IC remains in the start-up state for as long as this is the
case. The VDD voltage slowly oscillates between VDD = VDD(stop) and VDD = VDD(start).
7.3 Reset
A DC reset circuit is incorporated in the high-side driver. The high-side transistor is
switched off when the voltage on pin FS is below the high-side lockout voltage.
7.4 Oscillation control
The oscillation frequency is based on the 555-timer function. A self oscillating circuit is
created comprising the external components: resistors Rosc, RSENSE and capacitor Cosc.
Rosc and Cosc determine the nominal oscillating frequency.
An internal divider 0.5 fosc(int) is used to generate the accurate 50 % duty cycle. The
divider sets the bridge frequency at half the oscillator frequency.
The input on pin SW generates signal VSW. The VSW signal is used to determine the
frequency in all states except preheat. Signal VCB is an internally generated signal used to
determine the frequency during the preheat state.
UBA2212
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 February 2012
© NXP B.V. 2012. All rights reserved.
5 of 18
5 Page 
NXP Semiconductors
UBA2212
Half-bridge power IC family for CFL lamps
Table 5. Characteristics …continued
Tj = 25 C; all voltages are measured with respect to SGND; positive currents flow into the IC.
Symbol
Parameter
Conditions
Min
Boost function
VO(ref)bst
boost reference output voltage
Tj(end)bst
boost end junction temperature
tbst boost time
tt transition time
Steady function
VDD = 12 V; HV = 30 V; VSW = 3 V
CSW = 220 nF
CSW = 220 nF
-
-
-
-
VO(ref)
steady reference output voltage
NLCBR
lamp current boost ratio
OTP function
VDD = 12 V; HV = 30 V; VSW = 3 V
boost and steady state
-
-
Tth(act)otp
overtemperature protection
activation threshold temperature
-
Tth(rel)otp
overtemperature protection
release threshold temperature
-
Typ Max Unit
450 -
90 -
48 -
2-
mV
C
s
s
300 -
1.5 -
mV
170 -
100 -
C
C
UBA2212
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 February 2012
© NXP B.V. 2012. All rights reserved.
11 of 18
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| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet UBA2212.PDF ] | |
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