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PDF FMSK850Y-DG Data sheet ( Hoja de datos )

Número de pieza FMSK850Y-DG
Descripción (FMSK820Y-DG - FMSK8100Y-DG) 8.0A Surface Mount Schottky Barrier Rectifiers
Fabricantes American First Semiconductor 
Logotipo American First Semiconductor Logotipo



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Chip Schottky Barrier Rectifier
FMSK820Y-DG THRU FMSK8100Y-DG
8.0A Surface Mount Schottky Barrier
Rectifiers - 20V-100V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
Suffix "-H" indicates Halogen free parts, ex. FMSK820Y-DG-H.
Mechanical data
Epoxy: UL94-V0 rated frame retardant
Case: Molded plastic, TO-252 / DPAK
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: lndicated by cathode band
Mounting Position: Any
Weight: Approximated 0.34 gram
Package outline
DPAK
0.048(1.20)
0.031(0.80)
0.264(6.70)
0.248(6.30)
0.217(5.50)
0.201(5.10)
0.098(2.50)
0.083(2.10)
0.024(0.60)
0.016(0.40)
0.244(6.20)
0.228(5.80)
0.114(2.90)
0.098(2.50)
0.185(4.70)
0.169(4.30)
0.039(1.00)
0.031(0.80)
0.024(0.60)
0.016(0.40)
0.032(0.80)
0.016(0.40)
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Thermal resistance
Junction to case
Storage temperature
Symbol
IO
MIN.
TYP.
MAX. UNIT
8.0 A
IFSM 150 A
0.5
IR
mA
20
RθJC
3.0 OC/W
TSTG
-65
+175 OC
SYMBOLS
FMSK820Y-DG
FMSK840Y-DG
FMSK845Y-DG
FMSK850Y-DG
FMSK860Y-DG
FMSK880Y-DG
FMSK8100Y-DG
V
RR
*
M
1
(V)
20
40
45
50
60
80
100
V
*
RMS
2
(V)
14
28
31.5
35
42
56
70
V
*
R
3
(V)
20
40
45
50
60
80
100
V
*
F
4
(V)
0.55
0.75
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF = 8.0A
@ 2010 Copyright By American First Semiconductor
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