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PDF FR306G Data sheet ( Hoja de datos )

Número de pieza FR306G
Descripción (FR301G - FR307G) 3.0A Leaded Type Fast Recovery Rectifiers
Fabricantes American First Semiconductor 
Logotipo American First Semiconductor Logotipo



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No Preview Available ! FR306G Hoja de datos, Descripción, Manual

Silicon Rectifier
3.0A Leaded Type Fast Recovery
Rectifiers-50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
Fast switching for high efficiency.
High surge current capability.
Glass passivated chip junction structure
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen-free parts, ex. FR301G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-201AD
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 1.10 gram
FR301G THRU FR307G
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER
Forward rectified current
See Fig.2
CONDITIONS
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 3.0 A
IFSM 125 A
5.0
IR
μA
150
CJ 60 pF
TSTG
-65
+175 OC
SYMBOLS
V
R
*
RM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FR301G
FR302G
FR303G
FR304G
50
100
200
400
35 50
70 100
140 200
280 400
1.30
150
FR305G
600
420 600
250
FR306G
FR307G
800
1000
560
700
800
1000
500
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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