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PDF PBSS4330PAS Data sheet ( Hoja de datos )
| Número de pieza | PBSS4330PAS | |
| Descripción | 3A NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS4330PAS
30 V, 3 A NPN low VCEsat (BISS) transistor
11 September 2014
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
package with medium power capability and visible and soldarable side pads.
PNP complement: PBSS5330PAS
2. Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High efficiency due to less heat generation
• High temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) area requirements
• Leadless small SMD plastic package with soldarable side pads
• Exposed heat sink for excellent thermal and electrical conductivity
• Suitable for Automatic Optical Inspection (AOI) of solder joint
• AEC-Q101 qualified
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 30 V
- - 3A
- - 5A
- 75 100 mΩ
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1 page  
NXP Semiconductors
PBSS4330PAS
30 V, 3 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab979
10- 1
10- 5
10- 4
10- 3
10- 2
10- 1
FR4 PCB, standard footprint
1
10 102 103
tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
006aab980
0.02
0.01
10
10- 1
10- 5
10- 4
10- 3
10- 2
FR4 PCB, mounting pad for collector 1 cm2
10- 1
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4330PAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 18
5 Page 
NXP Semiconductors
PBSS4330PAS
30 V, 3 A NPN low VCEsat (BISS) transistor
102
RCEsat
(Ω)
10
006aac050
1
10- 1
(1)
(2)
(3)
10- 2
10- 1
1
10
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
102 103 104
IC (mA)
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aac051
10
1
10- 1
(1)
(2)
(3)
10- 2
10- 1
1
10
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
102 103 104
IC (mA)
Fig. 15. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4330PAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 18
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| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet PBSS4330PAS.PDF ] | |
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