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PDF FGH75N60UFTU Data sheet ( Hoja de datos )
| Número de pieza | FGH75N60UFTU | |
| Descripción | 75A Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGH75N60UF
600V, 75A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Induction Heating, UPS, SMPS, PFC
April 2009
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new
series of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
20
150
75
225
452
181
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.276
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2009 Fairchild Semiconductor Corporation
FGH75N60UF Rev. A1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
200
100
tr
Figure 14. Turn-off Characteristics vs.
Gate Resistance
10000
1000
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
td(off)
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
Figure 15. Turn-on Characteristics vs.
Collector Current
1000
100
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
tr
td(on)
10
1
0 30 60 90 120 150
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
10
Common Emitter
VCC = 400V, VGE = 15V
8 IC = 75A
TC = 25oC
6 TC = 125oC
Eon
100
tf
10
0 10 20 30 40 50
Collector Current, IC [A]
Figure 16. Turn-off Characteristics vs.
Collector Current
1000
100
td(off)
tf
10
1
0
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
30 60 90 120
Collector Current, IC [A]
150
Figure 18. Switching Loss vs. Collector Current
100
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
10 TC = 125oC
Eon
4
Eoff 1
2
Eoff
0
0 10 20 30 40 50
Gate Resistance, RG []
0.1
0
30 60 90 120
Collector Current, IC [A]
150
FGH75N60UF Rev. A1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGH75N60UFTU.PDF ] | |
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