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PDF FGH75N60SFTU Data sheet ( Hoja de datos )

Número de pieza FGH75N60SFTU
Descripción 75A Field Stop IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FGH75N60SF
600V, 75A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =2.3V @ IC = 75A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Induction Heating, UPS, SMPS, PFC
December 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where
low conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
± 20
150
75
225
452
181
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.276
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH75N60SF Rev. A
1
www.fairchildsemi.com

1 page




FGH75N60SFTU pdf
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
200
100
tr
td(on)
10
0
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
Figure 15. Turn-on Characteristics vs.
Collector Current
200
100
Common Emitter
VGE = 15V, RG = 3
TC = 25oC
TC = 125oC
tr
td(on)
10
20
40 60 80 100 120 140 160
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
15
Common Emitter
10 VCC = 400V, VGE = 15V
IC = 75A
TC = 25oC
TC = 125oC
Eon
Eoff
Figure 14. Turn-off Characteristics vs.
Gate Resistance
6000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
TC = 25oC
TC = 125oC
td(off)
100
tf
10
0 10 20 30 40 50
Gate Resistance, RG []
Figure 16. Turn-off Characteristics vs.
Collector Current
200
100
td(off)
tf
Common Emitter
VGE = 15V, RG = 3
TC = 25oC
TC = 125oC
10
20 40 60 80 100 120 140 160
Collector Current, IC [A]
Figure 18. Switching Loss vs. Collector Current
30
Common Emitter
VGE = 15V, RG = 3
10 TC = 25oC
TC = 125oC
Eon
Eoff
1
1
0 10 20 30 40 50
Gate Resistance, RG []
0.1
20
40 60 80 100 120 140 160
Collector Current, IC [A]
FGH75N60SF Rev. A
5
www.fairchildsemi.com

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