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PDF SMM4F26A Data sheet ( Hoja de datos )

Número de pieza SMM4F26A
Descripción High junction temperature Transil
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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SMM4F
High junction temperature Transil™
Features
Typical peak pulse power:
www.DataSheet4U.com– 400 W (10/1000 µs)
– 2.4 kW (8/20 µs)
Stand off voltage range: from 5 V to 33 V
Unidirectional types
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating Tj max: 175 °C
JEDEC registered package outline
RoHS package
Halogen free molding compound
Complies with the following standards
IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883G-Method 3015-7: class3
– 25 kV (human body model)
A
K
STmite flat
(DO222-AA)
Description
The SMM4F Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 400 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provide a better
safety margin to protect sensitive circuits with
extended life time expectancy.
Packaged in STmite flat, this minimizes PCB
space consumption (footprint in accordance with
IPC 7531 standard).
December 2007
TM: Transil is a trademark of STMicroelectronics
Rev 2
1/10
www.st.com
10

1 page




SMM4F26A pdf
SMM4F
Characteristics
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
10000
1000
100
www.DataSheet4U.com
10
1
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
SMM4F5.0A
SMM4F15A
SMM4F24A
SMM4F33A
VR(V)
10
100
Figure 6.
Peak forward voltage drop versus
peak forward current (typical
values)
IFM(A)
1.0E+02
1.0E+01
1.0E+00
Tj =125 °C
1.0E-01
1.0E-02
0.0
Tj =25 °C
VFM(V)
0.5 1.0 1.5 2.0
2.5
3.0
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (printed
ciruit board FR4, SCu = 1 cm2)
Zth(j-a)/Rth(j-a)
1.00
On recommended pad
layout
0.10
0.01
0.00
1.0E-03
1.0E-02
1.0E-01
tp(S)
1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead (printed circuit
board FR4, eCu = 35 µm)
Rth(j-a)(°C/W)
200
180
160
140
120
100
80
60 SCU(cm2)
40
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Figure 9.
Leakage current versus junction temperature (typical values)
IR(nA)
1.E+04
1.E+03
1.E+02
1.E+01
VBR11.7V
VBR>11.7V
1.E+00
Tj(°C)
VR=VRM
1.E-01
25 50 75 100 125 150 175
5/10

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