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PDF AUIRFN8459 Data sheet ( Hoja de datos )

Número de pieza AUIRFN8459
Descripción Dual N-Channel MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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AUTOMOTIVE GRADE
 
Features
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast swithcing speed and improved repetitive avalanche rating.
These features combine to make this product an extremely
efficient and reliable device for use in Automotive and wide variety
of other applications.
 
Applications
12V Automotive Systems
Brushed DC Motor
Braking
Transmission
AUIRFN8459
VDSS
RDS(on) typ.
max
ID (Silicon Limited)
ID (Package Limited)
40V
4.8m
5.9m
70A
50A
 
G
Gate
DUAL PQFN 5X6 mm
D
Drain
S
Source
Base Part Number
Package Type
  
AUIRFN8459
Dual PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
 
AUIRFN8459TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
ID @ TC (Bottom) = 25°C
IDM
PD @TC (Bottom) = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Max.
70
50
50
320
50
0.33
± 20
66
110
See Fig. 14, 15, 22a, 22b
-55 to + 175
Units
A
W
W/°C
V
mJ
A
°C  
1 www.irf.com © 2014 International Rectifier
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July 29, 2014

1 page




AUIRFN8459 pdf
 
10
AUIRFN8459
D = 0.50
1
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
0.1 Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Avalanche Current vs. Pulse Width Current
1.0E-02
1.0E-01
70
TOP
Single Pulse
60
BOTTOM 1.0% Duty Cycle
ID = 40A
50
40
30
20
10
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5 www.irf.com © 2014 International Rectifier
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav  
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