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PDF 2N4879 Data sheet ( Hoja de datos )
| Número de pieza | 2N4879 | |
| Descripción | Dual Monolithic Matched NPN Silicon Planar Transistor | |
| Fabricantes | New Jersey Semi-Conductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N4879 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, fine.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N4O44, 2N4045, 2H41OO,
2N4878, 2N4879, 2N4880
Dual Monolithic Matched
NPN Silicon Planar
FEATURES
• High Gain At Low Current hpE > 200 @ 10 /nA
• Low Output Capacitance C0uo<0.8pF
• hp£ Match hj
Transistors
PIN
CONFIGURATION
• Tight Vg£ Tracking
A«vBE,-vB_;
• Dietectrically isolated matched pairs for differential amplifiers.
TO-71
TO-78
ABSOLUTE MAXIMUM RATINGS
® 25"C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-65°C to +200°C
Operating Junction Temperature
+200°C
Maximum Power Dissipation
ONE SIDE BOTH SIDES ONE SIDE BOTH SIDES
Tout Dittip*lion it 25?C
C»M T*mc«flture
03 Win
Dfrtling Factor
1.7mW/*
0.9 Wilt
2,9mVV/'C
0.4 Wnt 0.75 Wall
2.3mW/°C 4.3mW/'C
2N4044 3N4100 2N4046
2N4878 2N4879 2N488O
vcao
VFO
vrso
ceo
'e
CoM«cior to 6»e Voltao*
CoKector to Emitter Voltage
Emitter to Baw Voltage (Note 2)
Collector to Collector Voltage
Collector Current
60V
60 V
7V
100V
10,,-.A
ssv
55V
7V
100V
10mA
45V
45V
7V
100 V
10mA
*" «,% C'
CHIP
TOPOGRAPHY
4000
~f • l||h -COLLECTOR ^1
• •*— -COLLECTOS -1 JMM fJQlO
imS Sl>, J" 2PLOCES OSS' OM
b) W ^
rvp. 2 PLACES .woo n,A
8AS£
/ V "iWltTER =7
I-1
\r ! HACIS JBIl „
""•"
VrjJITTtr, „ -•»«
ORDERING INFORMATION
TO-7B
TO-71
WAFER
01CE
2N4044
2N4045
2N4100
2N4878
2N4879
2N4880
2N4044/W 2N4CW4/D
2N404S/W 2N4CM5/D
2N4100/W 2N4100/D
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
PARAMETER
hp|=
hpcj
rtFE(-55°C)
VBEIon)
vCE(sat)
ICBO
iCBOI+ISO'C)
|£BO
C0bo
DC Current Gain
DC Current Cain
DC Current Gain
Emitter-Base On Voltage
Collector Saturation Voltage
Collector CutoffCurrent
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
2N4044
2N4878
MIN MAX
200 600
22S
75
0.7
0.3S
0.1
0.1
0.1
0.8
2N4100
2N4879
MIN MAX
150 600
175
50
0.7
0.35
0.1
0.1
0.1
0.8
2N4045
2N4880
MIN MAX
80 800
100
30
0.7
0.35
0,1
0.1
0.1
0.8
UNIT
TEST CONDITIONS
IC = 10//A. VCE = 5V
1C" 1.0mA, V C E ^ 5V
IC= lOfiA, VCE = 5 V
V l c = 10/iA. VCE = 5 V
V 1C' 1.0mA, IB = 0.1 mA
nA IE-O, VcB = *5V,30V
*|A l E - O . V C B = 4 5 V , 3 0 V
nA ic"0. VEB = SV
pF IE = O, VCB = S V
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4879.PDF ] | |
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