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Número de pieza | FDMA8878 | |
Descripción | Single N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMA8878 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! FDMA8878
May 2012
Single N-Channel Power Trench® MOSFET
30 V, 9.0 A, 16 mΩ
Features
General Description
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A
Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A
High performance trench technology for extremely low rDS(on)
Fast switching speed
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance.
Application
DC/DC Buck Converters
Load Switch in NB
Notebook Battery Power Management
Pin 1
Drain
DD G
Source
DD S
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
DD
DD
GS
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
10
9.0
40
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
878
Device
FDMA8878
Package
MicroFET 2x2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev.C
1
www.fairchildsemi.com
1 page Dimensional Outline and Pad Layout
0.10 C
2X
2.000
2.000
PIN#1 LOCATION
0.8 MAX
0.10 C
0.08 C 0.05
0.00
SEATING
PLANE
PIN #1 IDENT
0.33
0.20
0.10 C
2X
(0.20)
C
(0.30)
1.000
0.800
1
3
(0.56) 1.05
0.95
6
0.65
1.30
4
0.25~0.35
0.10 C A B
0.05 C
1.00
6
4
NO DRAIN OR GATE
TRACES ALLOWED IN
THIS AREA
1.05
1.35
0.66
2.30
(0.47)
1
0.65 TYP
3
0.40 TYP
RECOMMENDED LAND PATTERN OPT 1
1.00
6
4
1.05
1.35
0.66 2.30
(0.47)
1
3
0.65 TYP
0.40 TYP
RECOMMENDED LAND PATTERN OPT 2
A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION
MO-229 DATED AUG/2003
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. DRAWING FILENAME: MKT-MLP06Lrev2.
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev. C
5
www.fairchildsemi.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDMA8878.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMA8878 | Single N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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