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Número de pieza | DMN26D0UFB4 | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN26D0UFB4 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(on)
3.0Ω @ VGS = 4.5V
6.0Ω @ VGS = 1.8V
ID
TA = 25°C
240mA
170mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
Features and Benefits
• N-Channel MOSFET
• Low On-Resistance:
• 3.0 Ω @ 4.5V
• 4.0 Ω @ 2.5V
• 6.0 Ω @ 1.8V
• 10 Ω @ 1.5V
• Very Low Gate Threshold Voltage, 1.05V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package, 0.4mm Maximum Package
Height
• ESD Protected Gate
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Drain
ESD PROTECTED
X2-DFN1006-3
Bottom View
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
S
D
G
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMN26D0UFB4-7
DMN26D0UFB4-7B
Case
X2-DFN1006-3
X2-DFN1006-3
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Marking Information
DMN26D0UFB4-7
M1
DMN26D0UFB4-7B
M1 M1 = Product Type Marking Code
Top View
Dot Denotes Drain Side
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
March 2012
© Diodes Incorporated
1 page Package Outline Dimensions
A
A1
E b2
D
L2 L3 L1
Suggested Pad Layout
X1
X G2
C
G1
Y
Z
DMN26D0UFB4
b1
e
X2-DFN1006-3
Dim Min Max Typ
A ⎯ 0.40 ⎯
A1 0 0.05 0.02
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2
5 of 6
www.diodes.com
March 2012
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN26D0UFB4.PDF ] |
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DMN26D0UFB4 | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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