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PDF IRFH8316PBF Data sheet ( Hoja de datos )

Número de pieza IRFH8316PBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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IRFH8316PbF
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
30
± 20
2.95
4.30
30.0
50i
V
V
mΩ
nC
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 1.7°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH8316TRPBF
IRFH8316TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
27
21
120hi
78hi
50i
490
3.6
59
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through ‡ are on page 9
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June 2, 2015

1 page




IRFH8316PBF pdf
10
ID = 20A
8
6
4 TJ = 125°C
TJ = 25°C
2
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
IRFH8316PbF
700
600
TOP
ID
5.6A
8.6A
500 BOTTOM 20A
400
300
200
100
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5 www.irf.com © 2015 International Rectifier
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June 2, 2015

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