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PDF IRFH5302DTRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH5302DTRPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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IRFH5302DPbF
VDS
RDS(on) max
(@VGS = 10V)
VSD max
(@IS = 5.0A)
trr (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
2.5 mΩ
0.65
19
h100
V
ns
A
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low RDSon (<2.5mΩ)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5302DTRPBF
IRFH5302DTR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Qua nti ty
Tape and Reel
4000
Tape and Reel
400
Note
EOL Notice #259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 8
Max.
30
± 20
29
23
100
100
400
3.6
104
0.83
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
March 6, 2014
1 page  
7
ID = 50A
6
5
4
TJ = 125°C
3
2
TJ = 25°C
1
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5302DPbF
600
ID
500 TOP 8.7A
16A
BOTTOM 50A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 6, 2014
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFH5302DTRPBF.PDF ] | |
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