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PDF IRFH5025PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH5025PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
250 V
100 mΩ
37 nC
1.6 Ω
25 A
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Low RDSon
Low Thermal Resistance to PCB (≤ 0.8°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFH5025PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
results in
⇒
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5025TRPBF
IRFH5025TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Top) = 25°C
ID @ TC(Top) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Top) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through
are on page 8
Max.
250
± 20
3.8
3.1
25
16
5.7
3.7
46
3.6
8.3
0.07
-55 to + 150
Note
EOL notice # 259
Units
V
A
W
W/°C
°C
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 12, 2014
1 page  
240
ID = 5.7A
200
160 TJ = 125°C
120
80
40
4
TJ = 25°C
8 12 16
VGS, Gate-to-Source Voltage (V)
20
Fig 12. On-Resistance vs. Gate Voltage
IRFH5025PbF
1400
1200
1000
ID
TOP 0.8A
1.2A
BOTTOM 5.7A
800
600
400
200
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 125°C and
Tstart =25°C (Single Pulse)
10
1
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 125°C.
0.01
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-01
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 12, 2014
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFH5025PBF.PDF ] | |
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