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PDF KHB2D0N60F2 Data sheet ( Hoja de datos )
| Número de pieza | KHB2D0N60F2 | |
| Descripción | N-Channel MOS Field Effect Transistor | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS= 600V, ID= 2.0A
Drain-Source ON Resistance :
RDS(ON)=5.0 @VGS = 10V
Qg(typ.) = 10.9nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB2D0N60F UNIT
KHB2D0N60P
KHB2D0N60F2
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600 V
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
2.0 2.0*
1.2 1.2*
8.0 8.0*
120
5.4
5.5
54 23
0.43 0.18
150
-55 150
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case RthJC
2.32
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
5.5 /W
- /W
62.5 /W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB2D0N60P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB2D0N60P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB2D0N60F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB2D0N60F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7
1 page  
KHB2D0N60P/F/F2
Fig12. Transient Thermal Response Curve
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Duty Factor, D= t1/t2
10-1 100 101
Fig13. Transient Thermal Response Curve
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3
10-2
TIME (sec)
PDM
t1
t2
- Duty Factor, D= t1/t2
10-1 100 101
2007. 5. 10
Revision No : 0
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KHB2D0N60F2.PDF ] | |
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