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PDF KHX1333C9D3B1-4G Data sheet ( Hoja de datos )

Número de pieza KHX1333C9D3B1-4G
Descripción 4GB 512M x 64-Bit DDR3-1333 CL9 240-Pin DIMM
Fabricantes Kingston 
Logotipo Kingston Logotipo



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No Preview Available ! KHX1333C9D3B1-4G Hoja de datos, Descripción, Manual

KHX1333C9D3B1/4G
4GB 512M x 64-Bit DDR3-1333
CL9 240-Pin DIMM
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
49.5ns (min.)
260ns (min.)
Row Active Time (tRASmin)
36ns (min.)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
2.100 W*
94 V - 0
0o C to 85o C
-55o C to +100o C
*Power will vary depending on the SDRAM used.
DESCRIPTION
HyperX KHX1333C9D3B1/4G is a 512M x 64-bit (4GB) DDR3-
1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory
module, based on eight 512M x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR3-1333
timing of 9-9-9. This 240-pin DIMM uses gold contact fingers.
The JEDEC electrical and mechanical specifications are as
follows:
FEATURES
JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), single sided component
kingston.com/hyperx
Continued >>
Document No. 4805926-001.D00 03/18/14 Page 1

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