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PDF NT16TC72C4NB1NL-BE Data sheet ( Hoja de datos )

Número de pieza NT16TC72C4NB1NL-BE
Descripción Registered DDR3 SDRAM DIMM
Fabricantes Nanya Technology 
Logotipo Nanya Technology Logotipo



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No Preview Available ! NT16TC72C4NB1NL-BE Hoja de datos, Descripción, Manual

NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ
NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL
NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ
NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600
Registered DDR3 SDRAM DIMM
Based on DDR3-1066/1333 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM B-Die
Based on DDR3-1066 1Gx4 (DDP) (16GB) SDRAM B-Die
Features
•Performance:
Speed Sort
PC3-8500 PC3-10600
-BE -CG Unit
DIMM CAS Latency
79
fck Clock Frequency
533 667 MHz
tck Clock Cycle
1.875
1.5 ns
fDQ DQ Burst Frequency 1066
1333
Mbps
240-Pin Registered Dual In-Line Memory Module (RDIMM)
2GB/4GB: 256Mx72/512Mx72 DDR3 Registered DIMM based on
256Mx8 DDR3 SDRAM B-Die devices
4GB/8GB: 512Mx72/1024Mx72 DDR3 Registered DIMM based
on 512Mx4 DDR3 SDRAM B-Die devices
16GB: 2Gx72 DDR3 Registered DIMM based on 1024Mx4 (DDP)
DDR3 SDRAM B-Die devices
Intended for 533MHz/667MHz applications
• Inputs and outputs are SSTL-15 compatible
VDD = VDDQ = 1.5V ± 0.075V (for DDR3)
VDD = VDDQ = 1.35V -0.0675/+0.1V (for DDR3L)
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
DRAM DLL aligns DQ and DQS transitions with clock transitions.
Address and control signals are fully synchronous to positive
clock edge
Nominal and Dynamic On-Die Termination support
• Programmable Operation:
- DIMM  Latency: 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
Two different termination values (Rtt_Nom & Rtt_WR)
15/10/1 (row/column/rank) Addressing for 2GB
15/11/1 (row/column/rank) Addressing for 4GB (512Mx4 Device)
15/10/2 (row/column/rank) Addressing for 4GB (256Mx8 Device)
15/11/2 (row/column/rank) Addressing for 8GB
15/11/4 (row/column/rank) Addressing for 16GB
Extended operating temperature rage
Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
SDRAMs are in 78-ball BGA Package
RoHS compliance and Halogen free
Description
NT2GC72B89B0NJ, NT2GC72B89B2NJ, NT2GC72C89B0NJ, NT2GC72C89B2NJ, NT4GC72B4PB0NL, NT4GC72C4PB0NL,
NT4GC72C4PB2NL, NT4GC72B8PB0NL ,NT4GC72C8PB0NL , NT4GC72C8PB2NL, NT8GC72B4NB1NJ,
NT8GC72B4NB3NJ ,NT8GC72C4NB1NJ, NT8GC72C4NB3NJ, NT16TC72B4NB1NL, NT16TC72C4NB1NL and NT16TC72C4NB3NL
are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Registered Dual In-Line Memory Module, organized as one rank of
256Mx72 (2GB), one rank or two ranks of 512Mx72 (4GB), two ranks of 1Gx72 (8GB) and four ranks of 2Gx72 (16GB) high-speed memory
array. Modules use nine 256Mx8 (2GB) 78-ball BGA packaged devices, eighteen 256Mx8 (4GB) 78-ball BGA packaged devices, thirty-six
512Mx4 (8GB) 78-ball BGA packaged devices and thirty-six 1Gx4 (DDP) (16GB) 78-ball BGA packaged devices. These DIMMs are
manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes
electrical variation between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25”
long space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of
1066Mbps/1333Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A14 and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.2
12/2010
1
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.

1 page




NT16TC72C4NB1NL-BE pdf
NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ
NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL
NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ
NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600
Registered DDR3 SDRAM DIMM
Functional Block Diagram (Part 1 of 2)
[2GB 1 Rank, 256Mx8 DDR3 SDRAMs]
DQS8

DM8/DQS17

CB[7:0]
DQS

TDQS

DQ[7:0]
ZQ
D8
DQS4

DM4/DQS13

DQ[39:32]
DQS

TDQS

DQ[7:0]
ZQ
D4
DQS3

DM3/DQS12

DQ[31:24]
DQS

TDQS

DQ[7:0]
ZQ
D3
DQS5

DM5/DQS14

DQ[47:40]
DQS

TDQS

DQ[7:0]
ZQ
D5
DQS2

DM2/DQS11

DQ[23:16]
DQS

TDQS

DQ[7:0]
ZQ
D2
DQS6

DM6/DQS15

DQ[55:48]
DQS

TDQS

DQ[7:0]
ZQ
D6
DQS1

DM1/DQS10

DQ[15:8]
DQS

TDQS

DQ[7:0]
ZQ
D1
DQS7

DM7/DQS16

DQ[63:56]
DQS

TDQS

DQ[7:0]
ZQ
D7
DQS0

DM0/DQS9

DQ[7:0]
DQS

TDQS

DQ[7:0]
ZQ
D0
Vtt
VDDSPD
VDD
VTT
VREFCA
VREFDQ
VSS
SPD
D0-D8
D0-D8
D0-D8
D0-D8
D0-D8
Vtt SPD w/ Integrated Thermal Sensor
SCL
SA0
SA1
SA2
SCL
A0
A1
A2 
Notes :

1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. ZQ resistors are 240Ω ±1%. For all other resistor values refer to the appropriate wiring diagram.
SDA
REV 1.2
12/2010
5
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.

5 Page





NT16TC72C4NB1NL-BE arduino
NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ
NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL
NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ
NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600
Registered DDR3 SDRAM DIMM
Functional Block Diagram (Part 3 of 3)
[4GB 1 Rank, 512Mx4 DDR3 SDRAMs]


CS0_A: SDRAMs D[3:0], D[12:8], D17

CS0_B: SDRAMs D[7:4], D[16:13]

BA[2:0]
A[14:0]



CKE0
CKE1
ODT0
ODT1
CK0

CK1

120Ω
±1%
120Ω
±5%
PAR_IN



BA[2:0]A
BA[2:0]B
A[14:0]A
A[14:0]B






RCKE0A
RCKE0B
BA[2:0]: SDRAMs D[3:0], D[12:8],D17
BA[2:0]: SDRAMs D[7:4], D[16:13]
A[14:0]: SDRAMs D[3:0], D[12:8], D17
A[14:0]: SDRAMs D[7:4], D[16:13]
RAS: SDRAMs D[3:0], D[12:8], D17
RAS: SDRAMs D[7:4], D[16:13]
CAS: SDRAMs D[3:0], D[12:8], D17
CAS: SDRAMs D[7:4], D[16:13]
WE: SDRAMs D[3:0], D[12:8], D17
WE: SDRAMs D[7:4], D[16:13]
CKE0: SDRAMs D[3:0], D[12:8], D17
CKE0: SDRAMs D[7:4], D[16:13]
RODT0A
RODT0B
ODT0: SDRAMs D[3:0], D[12:8], D17
ODT0: SDRAMs D[7:4], D[16:13]
PCK0A
PCK0B


CK: SDRAMs D[3:0], D[12:8], D17
CK: SDRAMs D[7:4], D[16:13]
CK: SDRAMs D[3:0], D[12:8], D17
CK: SDRAMs D[7:4], D[16:13]

: SDRAMs D[17:0]
REV 1.2
12/2010
11
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.

11 Page







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