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PDF 23NM60ND Data sheet ( Hoja de datos )
| Número de pieza | 23NM60ND | |
| Descripción | STB23NM60ND | |
| Fabricantes | STMicroelectronics | |
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STB23NM60ND, STF23NM60ND,
STP23NM60ND, STW23NM60ND
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh™ II Power MOSFET
(with fast diode) in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
STB23NM60ND
STF23NM60ND
STP23NM60ND
STW23NM60ND
VDSS @ RDS(on)
TJmax
max
ID
650 V < 0.180 Ω 19.5 A
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
TAB
3
1
D²PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
Applications
■ Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
'
3
!-V
Table 1. Device summary
Oreder codes
STB23NM60ND
STF23NM60ND
STP23NM60ND
STW23NM60ND
Marking
23NM60ND
23NM60ND
23NM60ND
23NM60ND
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 14367 Rev 4
1/22
www.st.com
22
1 page  
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
21 ns
19 ns
--
92 ns
42 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
19.5 A
-
78 A
VSD(2) Forward on voltage
ISD = 19.5 A, VGS=0
-
1.3 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19.5 A, di/dt =100
A/µs, VDD = 60 V
(see Figure 19)
190
- 1.2
13
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 60 V
270
di/dt =100 A/µs, ISD = 19.5
A Tj = 150 °C
(see Figure 19)
-
2.0
15
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Doc ID 14367 Rev 4
5/22
5 Page 
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
Table 8. D²PAK (TO-263) mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0°
mm
Typ.
2.54
0.4
Package mechanical data
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
Doc ID 14367 Rev 4
11/22
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet 23NM60ND.PDF ] | |
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