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Número de pieza | STU417S | |
Descripción | P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
Fabricantes | SamHop Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STU417S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! STU/D417SGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.2
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-40V
-43A
14 @ VGS=-10V
23 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-40
±20
-43
-34.4
-130
225
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Aug,23,2010
www.samhop.com.tw
1 page STU/D417S
Ver 1.2
15V
VDS
L
DR IVE R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
A
Unclamped Inductive Test Circuit
F igure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
2
1
D =0 . 5
0.2
0.1
0.1
0.05
0.02
P DM
t1
t2
0.01
1. R JA (t)=r (t) * R JA
2. R JA=S ee Datas heet
S INGLE PULS E
3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
0.01
10-5
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Aug,23,2010
5 www.samhop.com.tw
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet STU417S.PDF ] |
Número de pieza | Descripción | Fabricantes |
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