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PDF STU06L01 Data sheet ( Hoja de datos )
| Número de pieza | STU06L01 | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STU06L01
Sa mHop Microelectronics C orp.
STD06L01Green
Product
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
353 @ VGS=10V
6A
553 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
6
4.8
17
3.6
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,30,2013
www.samhop.com.tw
1 page  
STU06L01
STD06L01
Ver 1.1
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit
Figure 13a.
V(BR)DSS
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
P DM
t1
t2
0.01
1. R J JC (t)=r (t) * R J JC
2. R J JC=S ee Datas heet
S INGLE PULS E
3. T J M-T C = P DM* R J J C (t)
4. Duty C ycle, D=t1/t2
0.01
10-5
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Oct,30,2013
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STU06L01.PDF ] | |
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