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PDF R1WV3216RSD-7S Data sheet ( Hoja de datos )

Número de pieza R1WV3216RSD-7S
Descripción 32Mb Advanced LPSRAM
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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R1W V3216R Series
32Mb Advanced LPSRAM (2M wordx16bit)
REJ03C0215-0300Z
Rev.3.00
2008.03.03
Description
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit Advanced
LPSRAMs are assembled in one package.
The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch
of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
Features
• Single 2.7-3.6V power supply
• Small stand-by current:4µA (3.0V, typ.)
• Data retention supply voltage =2.0V
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention on the I/O bus
• Process technology: 0.15um CMOS
REJ03C0215-0300Z Rev.3.00 2008.03.03
page 1 of 15

1 page




R1WV3216RSD-7S pdf
R1W V3216R Series
Operating Table
CS1#
H
X
X
L
L
L
L
L
L
L
L
L
CS2 BYTE# LB#
XXX
LXX
XHH
HH L
HH L
HXX
HHH
HHH
HH L
HH L
HL L
HL L
UB# WE# OE# DQ0-7 DQ8-14 DQ15
Operation
X X X High-Z High-Z High-Z
Stand by
X X X High-Z High-Z High-Z
Stand by
H X X High-Z High-Z High-Z
Stand by
H L X Din High-Z High-Z Write in lower byte
H H L Dout High-Z High-Z Read from lower byte
X
H
H High-Z High-Z High-Z
Output disable
L
L
X High-Z Din
Din Write in upper byte
L H L High-Z Dout Dout Read from upper byte
L L X Din Din Din
Write
L H L Dout Dout Dout
Read
L L X Din High-Z A-1
Write
L H L Dout High-Z A-1
Read
Note 1. H:VIH L:VIL X: VIH or VIL
2. BYTE# pin is supported by only 52-pin µTSOP type. When apply BYTE# =“L” , please assign LB#=UB#=“L”.
Absolute Maximum Ratings
Parameter
Symbol
Value
Power supply voltage relative to Vss
Vcc
-0.5 to +4.6
Terminal voltage on any pin relation toVss
VT
-0.5*1 to Vcc+0.3*2
Power dissipation
Operation temperature
PT
Topr
R ver. *3
I ver. *3
0.7
0 to +70
-40 to +85
Storage temperature
Tstg
-65 to +150
Storage temperature range under bias
Tbias
R ver. *3
I ver. *3
0 to +70
-40 to +85
Note 1: -2.0V in case of AC (Pulse width 30ns)
2: Maximum voltage is +4.6V
3: Temperature range depends on R/I-version. Please see table on page 2.
Unit
V
V
W
ºC
ºC
ºC
ºC
ºC
REJ03C0215-0300Z Rev.3.00 2008.03.03
page 5 of 15

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R1WV3216RSD-7S arduino
R1W V3216R Series
Write Timing Waveform (1) (WE# CLOCK)
A0~20
(Word Mode)
A-1~20
(Byte Mode)
LB#,UB#
CS1#
tWC
Valid address
tBW
tCW
CS2 tCW
WE#
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
tAW
tAS tWP tWR
tWHZ
tOW
tDW tDH
Valid data
Note: Byte Mode is supported by only 52-pin µTSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V
REJ03C0215-0300Z Rev.3.00 2008.03.03
page 11 of 15

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