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PDF R1LV0414DSB-7LI Data sheet ( Hoja de datos )
| Número de pieza | R1LV0414DSB-7LI | |
| Descripción | 4M SRAM | |
| Fabricantes | Renesas | |
| Logotipo |  |
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R1LV0414D Series
4M SRAM (256-kword × 16-bit)
REJ03C0312-0100
Rev.1.00
May.24.2007
Description
The R1LV0414D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas’s high-performance
0.15µm CMOS and TFT technologies. R1LV0414DSeries has realized higher density, higher performance and low
power consumption. The R1LV0414D Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 44-pin TSOP II.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
Standby: 3 µW (typ) (VCC = 3.0 V)
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
• Temperature range: -40 to +85°C
Ordering Information
Type No.
R1LV0414DSB-5SI
R1LV0414DSB-7LI
Access time
55 ns
70 ns
Package
400-mil 44-pin plastic TSOP II (44P3W-H)
Rev.1.00, May.24.2007, page 1 of 12
1 page  
R1LV0414D Series
DC Characteristics
Parameter
Symbol Min
Typ Max Unit
Test conditions
Input leakage current
Output leakage current
Operating current
Average operating current
|ILI| 1 µA Vin = VSS to VCC
|ILO| 1 µA CS# = VIH or OE# = VIH or WE# =
VIL or LB# = UB# = VIH,
VI/O = VSS to VCC
ICC 20 mA CS# = VIL, Others = VIH/VIL,
II/O = 0 mA
ICC1 25 mA Min. cycle, duty = 100%,
II/O = 0 mA, CS# = VIL,
Others = VIH/VIL
ICC2 5 mA Cycle time = 1 µs,
duty = 100%,
Standby current
Standby current
−5SI
−7LI
to +85°C
to +70°C
to +40°C
to +25°C
to +85°C
ISB
ISB1
ISB1
ISB1
ISB1
ISB1
II/O = 0 mA, CS# ≤ 0.2 V,
VIH ≥ VCC − 0.2 V, VIL ≤ 0.2 V
0.1*1 0.3 mA CS# = VIH
10 µA Vin ≥ 0 V
8 µA (1) CS# ≥ VCC − 0.2 V
3 µA (2) LB# = UB# ≥ VCC − 0.2 V,
1*1 2.5 µA
CS# ≤ 0.2 V
20 µA Average values
to +70°C
ISB1
16 µA
to +40°C
ISB1
10 µA
to +25°C
ISB1
1*1 10 µA
Output high voltage
VOH 2.4 — — V IOH = −1 mA
VOH2 VCC − 0.2 —
— V IOH = −100 µA
Output low voltage
VOL — — 0.4 V IOL = 2 mA
VOL2 — — 0.2 V IOL = 100 µA
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
Capacitance
Parameter
Symbol Min Typ Max Unit
Input capacitance
Cin 8 pF
Input/output capacitance
CI/O 10 pF
Note: 1. This parameter is sampled and not 100% tested.
(Ta = +25°C, f = 1.0 MHz)
Test conditions
Note
Vin = 0 V
1
VI/O = 0 V
1
Rev.1.00, May.24.2007, page 5 of 12
5 Page 
R1LV0414D Series
Low VCC Data Retention Characteristics
(Ta = −40 to +85°C)
Parameter
Symbol Min Typ Max Unit
Test conditions
VCC for data retention
VDR 2 V Vin ≥ 0V
(1) CS# ≥ VCC − 0.2 V or
(2) LB# = UB# ≥ VCC − 0.2 V,
CS# ≤ 0.2 V
Data
−5SI
to +85°C
ICCDR
10 µA VCC = 3.0 V, Vin ≥ 0V
retention
current
−7LI
to +70°C
to +40°C
to +25°C
to +85°C
ICCDR
ICCDR
ICCDR
ICCDR
8 µA (1) CS# ≥ VCC − 0.2 V or
3 µA (2) LB# = UB# ≥ VCC − 0.2 V,
1*1 2.5 µA
CS# ≤ 0.2 V
20 µA Average values
to +70°C
ICCDR
16 µA
to +40°C
to +25°C
ICCDR
ICCDR
10 µA
1*1 10 µA
Chip deselect to data retention time
tCDR 0 ns See retention waveform
Operation recovery time
tR 5 ms
Note: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
Rev.1.00, May.24.2007, page 11 of 12
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R1LV0414DSB-7LI.PDF ] | |
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