DataSheet.es    


PDF R1LV0416DSB-7LI Data sheet ( Hoja de datos )

Número de pieza R1LV0416DSB-7LI
Descripción 4M SRAM
Fabricantes Renesas 
Logotipo Renesas Logotipo



Hay una vista previa y un enlace de descarga de R1LV0416DSB-7LI (archivo pdf) en la parte inferior de esta página.


Total 17 Páginas

No Preview Available ! R1LV0416DSB-7LI Hoja de datos, Descripción, Manual

R1LV0416D Series
4M SRAM (256-kword × 16-bit)
REJ03C0311-0100
Rev.1.00
May.24.2007
Description
The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm
CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery
backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch
ball grid array.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 55/70 ns (max)
Power dissipation:
Standby: 3 µW (typ) (VCC = 3.0 V)
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature Range: -40 to +85°C
Rev.1.00, May.24.2007, page 1 of 15

1 page




R1LV0416DSB-7LI pdf
R1LV0416D Series
Operation Table
CS1# CS2 WE# OE# UB#
H× × × ×
×L×××
× × × ×H
LHHL L
L HH L H
LHHL L
LHL × L
LHL ×H
LHL × L
L HHH ×
Note: H: VIH, L: VIL, ×: VIH or VIL
LB#
×
×
H
L
L
H
L
L
H
×
I/O0 to I/O7
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
High-Z
High-Z
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to VSS
Power dissipation
Operating temperature1
Storage temperature range
Storage temperature range under bias
Notes: 1. VT min: 3.0 V for pulse half-width 30 ns.
2. Maximum voltage is +4.6 V.
Symbol
V
CC
VT
PT
Topr
Tstg
Tbias
Value
0.5 to +4.6
0.5*1 to VCC + 0.3*2
0.7
40 to +85
65 to +150
40 to +85
Unit
V
V
W
°C
°C
°C
DC Operating Conditions
Parameter
Symbol
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
VCC
V
SS
V
IH
VIL
Ta
Note:
1.
V min:
IL
3.0 V for pulse half-width 30 ns.
Min
2.7
0
2.2
0.3
40
Typ Max Unit
3.0 3.6
V
00V
V + 0.3
CC
0.6
V
V
+85 °C
Note
1
Rev.1.00, May.24.2007, page 5 of 15

5 Page





R1LV0416DSB-7LI arduino
R1LV0416D Series
Write Timing Waveform (1) (WE# Clock)
Address
CS1#
CS2
LB#, UB#
WE#
Din
Dout
tAS*6
tWC
Valid address
tCW*5
tCW*5
tBW
tWR*7
tAW
tWP*4
tWHZ*1, 2
tDW tDH
Valid data
tOW*2
High impedance
Rev.1.00, May.24.2007, page 11 of 15

11 Page







PáginasTotal 17 Páginas
PDF Descargar[ Datasheet R1LV0416DSB-7LI.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
R1LV0416DSB-7LI4M SRAMRenesas
Renesas

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar