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PDF R1LV5256ESA-7SI Data sheet ( Hoja de datos )

Número de pieza R1LV5256ESA-7SI
Descripción 256Kb Advanced LPSRAM
Fabricantes Renesas 
Logotipo Renesas Logotipo



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R1LV5256E Series
256Kb Advanced LPSRAM (32k word x 8bit)
R10DS0068EJ0100
Rev.1.00
2011.04.13
Description
The R1LV5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit,
fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV5256E Series has realized
higher density, higher performance and low power consumption. The R1LV5256E Series is suitable for memory
applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has
been packaged in 28-pin SOP and 28-pin TSOP.
Features
Single 2.7~3.6V power supply
Small stand-by current: 1µA (3.0V, typical)
No clocks, No refresh
All inputs and outputs are TTL compatible.
Easy memory expansion by CS#
Common Data I/O
Three-state outputs: OR-tie Capability
OE# prevents data contention on the I/O bus
Ordering Information
Orderable Part Name
R1LV5256ESP-5SR#B0
R1LV5256ESP-5SI#B0
Access
time
55 ns
Temperature
Range
0 ~ +70°C
-40 ~ +85°C
R1LV5256ESP-7SR#B0
R1LV5256ESP-7SI#B0
R1LV5256ESP-5SR#S0
R1LV5256ESP-5SI#S0
R1LV5256ESP-7SR#S0
R1LV5256ESP-7SI#S0
R1LV5256ESA-5SR#B0
R1LV5256ESA-5SI#B0
70 ns
55 ns
70 ns
55 ns
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
R1LV5256ESA-7SR#B0
R1LV5256ESA-7SI#B0
R1LV5256ESA-5SR#S0
R1LV5256ESA-5SI#S0
R1LV5256ESA-7SR#S0
R1LV5256ESA-7SI#S0
70 ns
55 ns
70 ns
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
Package
450-mil 28-pin
plastic SOP
PRSP0028DB-B
(28P2W-C)
8mm×13.4mm 28-pin
plastic TSOP
(normal-bend type)
PTSA0028ZA-A
(28P2C-A)
Shipping
Container
Quantity
Tube
Max. 30pcs/Tube
Max. 300pcs/Inner Bag
Max. 1200pcs/Inner Box
Embossed
tape
1000pcs/Reel
Tray
Max. 234pcs/Tray
Max. 1872pcs/Inner Box
Embossed
tape
1000pcs/Reel
R10DS0068EJ0100 Rev.1.00
2011.04.13
Page 1 of 13

1 page




R1LV5256ESA-7SI pdf
R1LV5256E Series
DC Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Supply voltage
Vcc 2.7 3.0 3.6
Vss 0 0 0
Input high voltage
Input low voltage
Ambient temperature range
R Ver.
I Ver.
VIH 2.0
VIL -0.3
0
Ta
-40
- Vcc+0.3
- 0.6
- +70
- +85
Note 1. –3.0V for pulse 30ns (full width at half maximum)
2. Ambient temperature range depends on R/I-version. Please see table on page 1.
Unit
V
V
V
V
°C
°C
Note
1
2
2
DC Characteristics
Parameter
Input leakage current
Output leakage current
Average operating current
Standby current
Standby current
Symbol
| ILI |
| ILO |
ICC1
ICC2
ISB
Min. Typ. Max. Unit
Test conditions
- - 1 μA Vin = Vss to Vcc
-
-
1
μA
CS# =VIH or OE# =VIH,
VI/O =Vss to Vcc
-
14
25
mA
Min. cycle, duty =100%, II/O = 0mA
CS# =VIL, Others = VIH/VIL
Cycle =1μs, duty =100%, II/O = 0mA
- 2 5 mA CS# 0.2V,
VIH Vcc-0.2V, VIL 0.2V
-
-
0.33
mA
CS# =VIH,
Others = Vss to Vcc
-
1*1
Vin = Vss to Vcc
2 μA ~+25°C
- - 3 μA ~+40°C CS# Vcc-0.2V
ISB1
- - 8 μA ~+70°C
- - 10 μA ~+85°C
Output high voltage
VOH
2.4 -
- V IOH = -0.5mA
VOH2
Vcc
- 0.5
-
- V IOH = -0.05mA
Output low voltage
VOL - - 0.4 V IOL = 1mA
Note 1. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 25ºC), and not 100% tested.
R10DS0068EJ0100 Rev.1.00
2011.04.13
Page 5 of 13

5 Page





R1LV5256ESA-7SI arduino
R1LV5256E Series
Write Cycle (2) (CS# CLOCK)
A0~14
CS#
WE#
OE#
OE# = “H” level
VIH
DQ0~7
tWC
tAW
tAS tCW
tWR
tWP
tDW tDH
Valid Data
R10DS0068EJ0100 Rev.1.00
2011.04.13
Page 11 of 13

11 Page







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