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PDF BF975NF75B Data sheet ( Hoja de datos )

Número de pieza BF975NF75B
Descripción 75V N-Channel MOSFET
Fabricantes BYD Microelectronics 
Logotipo BYD Microelectronics Logotipo



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No Preview Available ! BF975NF75B Hoja de datos, Descripción, Manual

BYD Microelectronics Co., Ltd.
BF975NF75B
75V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any applications with low
gate drive requirements.
Features
z VDS =75 V
z ID =80A
z Typical RDS(ON)=7.5m (VGS=10V,ID=40A)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
TJ,Tstg
TL
Operating junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
Note1
Note2
Note1
Note1
Note3
Value
75
80
320
±20
800
35
18
11
210
-55 to +175
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
Datasheet
TS-MOS-PD-0037 Rev.A/2
Page 1 of 6

1 page




BF975NF75B pdf
BYD Microelectronics Co., Ltd.
Package Drawing
D
Φ
BF975NF75B
A
C1
b1
b
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
Φ
e
e1
Dimensions In Millimeters
Min Max
4.45 4.55
2.38 2.42
0.70 0.90
1.42 1.62
0.45 0.55
1.25 1.35
9.85 9.95
9.11 9.29
12.85
12.95
2.540TYP
5.04 5.12
2.77 2.83
12.98
13.18
2.97 3.03
3.58 3.62
A1
C
Dimensions In Inches
Min Max
0.175
0.179
0.093
0.095
0.028
0.035
0.056
0.064
0.018
0.022
0.049
0.053
0.388
0.392
0.359
0.366
0.506
0.510
0.100TYP
0.198
0.202
0.109
0.111
0.511
0.519
0.117
0.119
0.141
0.143
Datasheet
TS-MOS-PD-0037 Rev.A/2
Page 5 of 6

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