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PDF R1RW0416DSB-2LR Datasheet ( Hoja de datos )

Número de pieza R1RW0416DSB-2LR
Descripción 4M High Speed SRAM
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R1RW0416DSB-2LR datasheet

1 Page

R1RW0416DSB-2LR pdf
R1RW0416D Series
Operation Table
CS# OE# WE# LB# UB# Mode
V current
CC
H × × × × Standby
I ,I
SB SB1
L H H × × Output disable ICC
L L H L L Read
ICC
L L H L H Lower byte read ICC
L L H H L Upper byte read ICC
L L HHH
ICC
L × L L L Write
ICC
L × L L H Lower byte write ICC
L
×
L
HL
Upper byte write I
CC
L × L HH
I
CC
Note: H: VIH, L: VIL, ×: VIH or VIL
I/O1I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
I/O9I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
Ref. cycle
Read cycle
Read cycle
Read cycle
Write cycle
Write cycle
Write cycle
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
VCC
V
T
P
T
Topr
0.5 to +4.6
0.5*1
to
V
CC
+
0.5*2
1.0
0 to +70
Storage temperature
Tstg 55 to +125
Storage temperature under bias
Tbias
10 to +85
Notes: 1. VT (min) = 2.0 V for pulse width (under shoot) 6 ns.
2.
V
T
(max)
=
V
CC
+
2.0
V
for
pulse
width
(over
shoot)
6
ns.
Unit
V
V
W
°C
°C
°C
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Symbol
Min Typ
Supply voltage
VCC*3
3.0 3.3
VSS*4
00
Input voltage
VIH 2.0
VIL
0.5*1
Notes: 1. VIL (min) = 2.0 V for pulse width (under shoot) 6 ns.
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
3. The supply voltage with all V pins must be on the same level.
CC
4. The supply voltage with all VSS pins must be on the same level.
Max
3.6
0
VCC + 0.5*2
0.8
Unit
V
V
V
V
Rev.1.00, Mar.12.2004, page 5 of 14

5 Page

R1RW0416DSB-2LR arduino
R1RW0416D Series
Write Timing Waveform (1) (WE# Controlled)
Address
WE#*3
CS#*3
tWC
Valid address
tAW
tAS
tWP
tCW
tWR
OE#
LB#, UB#
DOUT
DIN
tBW
tWHZ
tOHZ
*2
tOLZ
tOW
High impedance
tDW tDH
Valid data
Rev.1.00, Mar.12.2004, page 11 of 14

11 Page





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