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PDF R1RW0416DSB-2LR Data sheet ( Hoja de datos )
| Número de pieza | R1RW0416DSB-2LR | |
| Descripción | 4M High Speed SRAM | |
| Fabricantes | Renesas | |
| Logotipo |  |
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R1RW0416D Series
4M High Speed SRAM (256-kword × 16-bit)
REJ03C0107-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416D
is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 130 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
• Data retention current: 0.4 mA (max) (L-version)
• Data retention voltage: 2.0 V (min) (L-version)
• Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 14
1 page  
R1RW0416D Series
Operation Table
CS# OE# WE# LB# UB# Mode
V current
CC
H × × × × Standby
I ,I
SB SB1
L H H × × Output disable ICC
L L H L L Read
ICC
L L H L H Lower byte read ICC
L L H H L Upper byte read ICC
L L HHH
ICC
L × L L L Write
ICC
L × L L H Lower byte write ICC
L
×
L
HL
Upper byte write I
CC
L × L HH
I
CC
Note: H: VIH, L: VIL, ×: VIH or VIL
I/O1−I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
I/O9−I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
Ref. cycle
Read cycle
Read cycle
Read cycle
Write cycle
Write cycle
Write cycle
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
VCC
V
T
P
T
Topr
−0.5 to +4.6
−0.5*1
to
V
CC
+
0.5*2
1.0
0 to +70
Storage temperature
Tstg −55 to +125
Storage temperature under bias
Tbias
−10 to +85
Notes: 1. VT (min) = −2.0 V for pulse width (under shoot) ≤ 6 ns.
2.
V
T
(max)
=
V
CC
+
2.0
V
for
pulse
width
(over
shoot)
≤
6
ns.
Unit
V
V
W
°C
°C
°C
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Symbol
Min Typ
Supply voltage
VCC*3
3.0 3.3
VSS*4
00
Input voltage
VIH 2.0
VIL
−0.5*1
Notes: 1. VIL (min) = −2.0 V for pulse width (under shoot) ≤ 6 ns.
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns.
3. The supply voltage with all V pins must be on the same level.
CC
4. The supply voltage with all VSS pins must be on the same level.
Max
3.6
0
VCC + 0.5*2
0.8
Unit
V
V
V
V
Rev.1.00, Mar.12.2004, page 5 of 14
5 Page 
R1RW0416D Series
Write Timing Waveform (1) (WE# Controlled)
Address
WE#*3
CS#*3
tWC
Valid address
tAW
tAS
tWP
tCW
tWR
OE#
LB#, UB#
DOUT
DIN
tBW
tWHZ
tOHZ
*2
tOLZ
tOW
High impedance
tDW tDH
Valid data
Rev.1.00, Mar.12.2004, page 11 of 14
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet R1RW0416DSB-2LR.PDF ] | |
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