DataSheet.es R1RW0408DGE-2LR Hoja de datos PDF


PDF R1RW0408DGE-2LR Datasheet ( Hoja de datos )

Número de pieza R1RW0408DGE-2LR
Descripción 4M High Speed SRAM
Fabricantes Renesas 
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R1RW0408DGE-2LR datasheet

1 Page

R1RW0408DGE-2LR pdf
R1RW0408D Series
Operation Table
CS# OE# WE# Mode
H × × Standby
L H H Output disable
L L H Read
L H L Write
L L L Write
Note: H: VIH, L: VIL, ×: VIH or VIL
VCC current
ISB, ISB1
ICC
ICC
ICC
ICC
I/O
High-Z
High-Z
DOUT
DIN
DIN
Ref. cycle
Read cycle (1) to (3)
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
0.5 to +4.6
0.5*1 to VCC + 0.5*2
1.0
0 to +70
Storage temperature
Tstg
55 to +125
Storage temperature under bias
Tbias
10 to +85
Notes: 1. VT (min) = 2.0 V for pulse width (under shoot) 6 ns.
2. VT (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
Unit
V
V
W
°C
°C
°C
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Symbol Min
Typ
Supply voltage
VCC*3
VSS*4
3.0
0
3.3
0
Input voltage
VIH 2.0
VIL 0.5*1
Notes: 1. VIL (min) = 2.0 V for pulse width (under shoot) 6 ns.
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all VSS pins must be on the same level.
Max
3.6
0
VCC + 0.5*2
0.8
Unit
V
V
V
V
REJ03C0111-0200 Rev.2.00,
Dec.1.2008, page 5 of 12

5 Page

R1RW0408DGE-2LR arduino
R1RW0408D Series
Read Timing Waveform (3) (WE# = VIH, CS# = VIL, OE# = VIL)*2
CS#
DOUT
tRC
tCLZ
High
impedance
tACS
tCHZ
Valid data
High
impedance
Write Timing Waveform (1) (WE# Controlled)
Address
OE#
CS#*3
WE#*3
DOUT
DIN
tWC
Valid address
tAW
tWR
tAS
tOHZ
tCW
tWP
High impedance*5
tDW tDH
*4 Valid data
*4
REJ03C0111-0200 Rev.2.00,
Dec.1.2008, page 10 of 12

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