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PDF R1RW0408DGE-2LR Datasheet ( Hoja de datos )

Número de pieza R1RW0408DGE-2LR
Descripción 4M High Speed SRAM
Fabricantes Renesas 
Logotipo Renesas Logotipo

Total 14 Páginas
		
R1RW0408DGE-2LR Hoja de datos, Descripción, Manual
R1RW0408D Series
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0111-0200
Rev. 2.00
Dec.1.2008
Description
The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The
R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Features
Single supply: 3.3 V ± 0.3 V
Access time: 10 ns /12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 115mA/ 100mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
Data retention current: 0.4 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 12

1 page

R1RW0408DGE-2LR pdf
R1RW0408D Series
Operation Table
CS# OE# WE# Mode
H × × Standby
L H H Output disable
L L H Read
L H L Write
L L L Write
Note: H: VIH, L: VIL, ×: VIH or VIL
VCC current
ISB, ISB1
ICC
ICC
ICC
ICC
I/O
High-Z
High-Z
DOUT
DIN
DIN
Ref. cycle
Read cycle (1) to (3)
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
0.5 to +4.6
0.5*1 to VCC + 0.5*2
1.0
0 to +70
Storage temperature
Tstg
55 to +125
Storage temperature under bias
Tbias
10 to +85
Notes: 1. VT (min) = 2.0 V for pulse width (under shoot) 6 ns.
2. VT (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
Unit
V
V
W
°C
°C
°C
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Symbol Min
Typ
Supply voltage
VCC*3
VSS*4
3.0
0
3.3
0
Input voltage
VIH 2.0
VIL 0.5*1
Notes: 1. VIL (min) = 2.0 V for pulse width (under shoot) 6 ns.
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all VSS pins must be on the same level.
Max
3.6
0
VCC + 0.5*2
0.8
Unit
V
V
V
V
REJ03C0111-0200 Rev.2.00,
Dec.1.2008, page 5 of 12

5 Page

R1RW0408DGE-2LR arduino
R1RW0408D Series
Write Timing Waveform (2) (CS# Controlled)
Address
CS# *3
WE# *3
DOUT
DIN
tWC
Valid address
tCW
tWR
tAW
tWP
tAS
tWHZ
tOW
High impedance*5
tDW tDH
*4 Valid data
*4
REJ03C0111-0200 Rev.2.00,
Dec.1.2008, page 11 of 12

11 Page


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