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PDF R1RP0404DGE-2PR Datasheet ( Hoja de datos )

Número de pieza R1RP0404DGE-2PR
Descripción 4M High Speed SRAM
Fabricantes Renesas 
Logotipo Renesas Logotipo

Total 13 Páginas
		
R1RP0404DGE-2PR Hoja de datos, Descripción, Manual
R1RP0404D Series
4M High Speed SRAM (1-Mword × 4-bit)
REJ03C0116-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed
access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed and high density memory,
such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high
density surface mounting.
Features
Single 5.0 V supply: 5.0 V ± 10%
Access time 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 130 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 1.0 mA (max) (L-version)
Data retention current: 0.5 mA (max) (L-version)
Data retention voltage: 2.0 V (min) (L-version)
Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 11

1 page

R1RP0404DGE-2PR pdf
R1RP0404D Series
DC Characteristics
(Ta = 0 to +70°C, VCC = 5.0 V ± 10%, VSS = 0 V)
Parameter
Input leakage current
Output leakage current
Operation power supply current
Symbol
IILII
IILOI
ICC
Min
Standby power supply current
I
SB
ISB1
Max
2
2
130
40
5
*1
1.0*1
Output voltage
VOL
0.4
VOH 2.4
Note: 1. This characteristics is guaranteed only for L-version.
Unit
µA
µA
mA
mA
mA
V
V
Test conditions
VIN = VSS to VCC
VIN = VSS to VCC
Min cycle
CS# = VIL, lOUT = 0 mA
Other inputs = V /V
IH IL
Min cycle, CS# = V ,
IH
Other inputs = VIH/VIL
f = 0 MHz
VCC CS# VCC 0.2 V,
(1)
0
V
V
IN
0.2
V
or
(2) VCC VIN VCC 0.2 V
IOL = 8 mA
IOH = 4 mA
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Max
Input capacitance*1
C
IN
6
Input/output capacitance*1
C
I/O
8
Note: 1. This parameter is sampled and not 100% tested.
Unit
pF
pF
Test conditions
V =0V
IN
V =0V
I/O
Rev.1.00, Mar.12.2004, page 5 of 11

5 Page

R1RP0404DGE-2PR arduino
R1RP0404D Series
Low VCC Data Retention Characteristics
(Ta = 0 to +70°C)
This characteristics is guaranteed only for L-version.
Parameter
V for data retention
CC
Symbol
V
DR
Min
2.0
Data retention current
ICCDR
Chip deselect to data
retention time
Operation recovery time
tCDR
tR
0
5
Max
500
Unit
V
µA
ns
ms
Test conditions
V
CC
CS#
V
CC
0.2
V
(1) 0 V VIN 0.2 V or
(2) VCC VIN VCC 0.2 V
VCC = 3 V, VCC CS# VCC 0.2 V
(1)
0
V
V
IN
0.2
V
or
(2) VCC VIN VCC 0.2 V
See retention waveform
Low VCC Data Retention Timing Waveform
VCC
4.5 V
t CDR
Data retention mode
tR
2.2 V
VDR
CS#
0V
VCC CS# VCC 0.2 V
Rev.1.00, Mar.12.2004, page 11 of 11

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