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Número de pieza | R1RP0408DGE-2LR | |
Descripción | 4M High Speed SRAM | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de R1RP0408DGE-2LR (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! R1RP0408D Series
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0112-0200
Rev. 2.00
Dec.1.2008
Description
The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 36-pin plastic SOJ.
Features
• Single 5.0 V supply: 5.0 V ± 10%
• Access time: 10 ns / 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 140mA /130mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 1.0 mA (max) (L-version)
• Data retention current: 0.5 mA (max) (L-version)
• Data retention voltage: 2 V (min) (L-version)
• Center VCC and VSS type pin out
RJE03C0112-0200 Rev.2.00,
Dec.1.2008, page 1 of 12
1 page R1RP0408D Series
Operation Table
CS#
H
L
L
L
L
Note:
OE#
WE#
Mode
× × Standby
H H Output disable
L H Read
HL
Write
L L Write
H: VIH, L: VIL, ×: VIH or VIL
VCC current
ISB, ISB1
ICC
ICC
ICC
ICC
I/O
High-Z
High-Z
DOUT
DIN
DIN
Ref. cycle
Read cycle (1) to (3)
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
−0.5 to +7.0
−0.5*1 to VCC + 0.5*2
1.0
0 to +70
Storage temperature
Tstg
−55 to +125
Storage temperature under bias
Tbias
−10 to +85
Notes: 1. VT (min) = −2.0 V for pulse width (under shoot) ≤ 6 ns.
2. VT (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns.
Unit
V
V
W
°C
°C
°C
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Symbol Min
Typ
Supply voltage
VCC*3
VSS*4
4.5
0
5.0
0
Input voltage
VIH 2.2
VIL −0.5*1
Notes: 1. VIL (min) = −2.0 V for pulse width (under shoot) ≤ 6 ns.
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns.
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all VSS pins must be on the same level.
Max
5.5
0
VCC + 0.5*2
0.8
Unit
V
V
V
V
RJE03C0112-0200 Rev.2.00,
Dec.1.2008, page 5 of 12
5 Page R1RP0408D Series
Write Timing Waveform (2) (CS# Controlled)
Address
CS# *3
WE# *3
DOUT
DIN
tWC
Valid address
tCW
tWR
tAW
tWP
tAS
tWHZ
tOW
High impedance*5
tDW tDH
*4 Valid data
*4
RJE03C0112-0200 Rev.2.00,
Dec.1.2008, page 11 of 12
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet R1RP0408DGE-2LR.PDF ] |
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R1RP0408DGE-2LR | 4M High Speed SRAM | Renesas |
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