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PDF AP01L60AT Data sheet ( Hoja de datos )

Número de pieza AP01L60AT
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP01L60AT Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP01L60AT
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Fast Switching Characteristics
Simple Drive Requirement
Description
G
D
S
BVDSS
RDS(ON)
ID
600V
12Ω
160mA
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
G
D
S
TO-92
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=100
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
600
± 30
160
100
300
0.83
-55 to 150
-55 to 150
Value
150
Units
V
V
mA
mA
mA
W
Unit
/W
Data & specifications subject to change without notice
201023073-1/4

1 page




AP01L60AT pdf
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-92
E SYMBOLS Millimeters
MIN NOM MAX
A 4.32 4.83 5.34
D 4.1 4.8 5.3
E 3.1 3.9 4.7
A b ---- 0.38 -----
L 12.7 --- ----
e1 ---- 1.27 ----
SEATING
PLANE
L
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
D
e1 b
Part Marking Information & Packing : TO-92
01L60AT
YWWSSS
Part Number
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence

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