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PDF AP01N40H-HF Data sheet ( Hoja de datos )
| Número de pieza | AP01N40H-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP01N40H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ 100% Avalanche Rated
▼ Fast Switching Performance
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
D
G
S
Description
AP01N40 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01N40J) is available for low-profile
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
400V
16Ω
0.5A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Rating
400
+20
0.5
0.4
2
17.4
2
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
7.2
62.5
110
Units
℃/W
℃/W
℃/W
1
201307113
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP01N40H-HF.PDF ] | |
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