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Número de pieza | IPG20N06S4L-26 | |
Descripción | Power Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPG20N06S4L-26 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPG20N06S4L-26
Product Summary
V DS
R
4)
DS(on),max
ID
60 V
26 mW
20 A
PG-TDSON-8-4
Type
IPG20N06S4L-26
Package
Marking
PG-TDSON-8-4 4N06L26
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2)
one channel active
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
Power dissipation
one channel active
T C=100 °C,
V GS=10 V2)
I D,pulse -
E AS
I AS
V GS
I D=10A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
18
80
35
15
±16
33
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-10-15
1 page IPG20N06S4L-26
5 Typ. output characteristics4)
I D = f(V DS); T j = 25 °C
parameter: V GS
80
10 V
5.5 V
60
5V
6 Typ. drain-source on-state resistance4)
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
70
3.5 V 4 V
4.5 V
5V
5.5 V
60
50
40 40
4.5 V
30
4V
20
3.5 V
20
10V
0 10
012345
0
V DS [V]
20 40 60
I D [A]
7 Typ. transfer characteristics4)
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance4)
R DS(on) = f(T j); I D = 17 A; V GS = 10 V
80 40
-55 °C 25 °C 175 °C
35
60
30
80
40 25
20
20
15
0
1234567
V GS [V]
10
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2010-10-15
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPG20N06S4L-26.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPG20N06S4L-26 | Power Transistor | Infineon |
IPG20N06S4L-26A | Power-Transistor | Infineon |
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