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PDF AP9468GH-HF Data sheet ( Hoja de datos )

Número de pieza AP9468GH-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP9468GH-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP9468GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
D BVDSS
40V
RDS(ON)
7mΩ
G ID 75A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9468GJ) are
available for low-profile applications.
G
D
S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating
40
+20
75
57
300
89
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
1.4
110
Units
/W
/W
Data & specifications subject to change without notice
1
200812012

1 page





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